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http://hdl.handle.net/1942/31630| Title: | Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator | Authors: | Lin, Han-Chung Wang, Wei-E. BRAMMERTZ, Guy MEURIS, Marc Heyns, Marc |
Issue Date: | 2009 | Publisher: | ELSEVIER SCIENCE BV | Source: | Microelectronic engineering, 86 (7-9) , p. 1554 -1557 | Abstract: | In this paper we compare the interface trap distributions D-it(E) of sulfur treated Al2O3/In0.53Ga0.47As interfaces, which underwent MOS capacitor and transistor fabrication processes. Lower interface trap densities were found close to the conduction band edge for both cases. The inversion channel MOSFET achieves high device performance despite the fact that its oxide-semiconductor interface quality is a notch below that of the MOS capacitor with optimized process. (C) 2009 Elsevier B.V. All rights reserved. | Notes: | Lin, HC (corresponding author), IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. dlin@imec.be |
Keywords: | Inversion channel;III-V;MOSFET;InGaAs on InP;ALD;Sulfur treatment | Document URI: | http://hdl.handle.net/1942/31630 | ISSN: | 0167-9317 | e-ISSN: | 1873-5568 | DOI: | 10.1016/j.mee.2009.03.112 | ISI #: | WOS:000267460100008 | Rights: | 2009 Elsevier B.V. All rights reserved | Category: | A1 | Type: | Journal Contribution |
| Appears in Collections: | Research publications |
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| 1-s2.0-S0167931709002810-main.pdf Restricted Access | Published version | 640.17 kB | Adobe PDF | View/Open Request a copy |
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