Advancing CMOS beyond the Si roadmap with Ge and III/V devices

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31634

Title:	Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Authors:	Heyns, M. Alian, A. BRAMMERTZ, Guy Caymax, M. Chang, Y. C. Chu, L. K. De Jaeger, B. Eneman, G. Gencarelli, F. Groeseneken, G. Hellings, G. Hikavyy, A. Hoffmann, T. Y. Houssa, M. Huyghebaert, C. Leonelli, D. Lin, D. Loo, R. Magnus, W. Merckling, C. MEURIS, Marc Mitard, J. Nyns, L. Orzali, T. Rooyackers, R. Sioncke, S. Soree, B. Sun, X. Vandooren, A. Verhulst, A. S. Vincent, B. Waldron, N. Wang, G. Wang, W. E. Witters, L.
Issue Date:	2011
Publisher:	IEEE
Source:	2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE,
Notes:	Heyns, M (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.
Keywords:	ATOMIC LAYER DEPOSITION
Document URI:	http://hdl.handle.net/1942/31634
ISBN:	978-1-4577-0505-2
ISI #:	WOS:000300015300075
Category:	C1
Type:	Proceedings Paper
Appears in Collections:	Research publications

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