Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31635
Title: Surface recombination velocity in GaAs and In0.15Ga0.85As thin films
Authors: BRAMMERTZ, Guy 
Heyns, Marc
MEURIS, Marc 
Caymax, Matty
Jiang, Dehuai
Mols, Yves
Degroote, Stefan
Leys, Maarten
Borghs, Gustaaf
Issue Date: 2007
Publisher: AMER INST PHYSICS
Source: Applied physics letters, 90 (13) (Art N° 134102)
Abstract: The authors have made photoluminescence intensity (PLI) measurements on thin GaAs and InGaAs films to compare the surface recombination velocity at interfaces of the materials with AlAs and native oxide. An analytical expression for the internal quantum efficiency of the PLI method for thin semiconducting films is derived. This expression is applied to measurements on specially designed multilayer structures based on GaAs and InGaAs thin films. The results show that the native oxide on an In0.15Ga0.85As film has a one order of magnitude lower surface recombination velocity than the native oxide on a GaAs film. (c) 2007 American Institute of Physics.
Notes: Brammertz, G (corresponding author), Interuniv Microelectron Ctr, IMEC vzw, Kapeldreef 75, B-3001 Louvain, Belgium.
guy.brammertz@imec.be
Keywords: ATOMIC-LAYER-DEPOSITION;FIELD-EFFECT TRANSISTOR;AL2O3
Document URI: http://hdl.handle.net/1942/31635
ISSN: 0003-6951
e-ISSN: 1077-3118
DOI: 10.1063/1.2717533
ISI #: WOS:000245317100122
Rights: 2007 American Institute of Physics.
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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