Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31640
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dc.contributor.authorHellings, Geert-
dc.contributor.authorEneman, Geert-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMartens, Koen-
dc.contributor.authorMitard, Jerome-
dc.contributor.authorWang, Wei-E-
dc.contributor.authorHoffmann, Thomas-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorDe Meyer, Kristin-
dc.date.accessioned2020-08-10T13:29:00Z-
dc.date.available2020-08-10T13:29:00Z-
dc.date.issued2010-
dc.date.submitted2020-08-06T10:27:49Z-
dc.identifier.citation2010 Silicon Nanoelectronics Workshop, SNW 2010, p. 1 -2 (Art N° 5562597)-
dc.identifier.isbn978-1-4244-7727-2-
dc.identifier.urihttp://hdl.handle.net/1942/31640-
dc.description.abstractA technique is presented and verified to predict the electrostatic degradation of MOSFET performance, due to interface traps and their energy distribution. It provides an estimate of the technology's sub-threshold slope degradation based on an extracted interface traps spectrum, without the need for transistor fabrication.-
dc.language.isoen-
dc.subject.otherTelegraph-
dc.subject.otherLow Frequency Noise-
dc.subject.otherMOSFET-
dc.titleInfluence of interface traps on high-mobility channel performance-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedate13 - 14 June 2010-
local.bibliographicCitation.conferencename2010 15th Silicon Nanoelectronics Workshop, SNW 2010-
local.bibliographicCitation.conferenceplaceHonolulu, HI; United States-
dc.identifier.epage2-
dc.identifier.spage1-
local.bibliographicCitation.jcatC1-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.bibliographicCitation.artnr5562597-
dc.identifier.doi10.1109/SNW.2010.5562597-
local.provider.typeCrossRef-
local.bibliographicCitation.btitle2010 Silicon Nanoelectronics Workshop, SNW 2010-
local.uhasselt.uhpubno-
item.fulltextNo Fulltext-
item.contributorHellings, Geert-
item.contributorEneman, Geert-
item.contributorBRAMMERTZ, Guy-
item.contributorMartens, Koen-
item.contributorMitard, Jerome-
item.contributorWang, Wei-E-
item.contributorHoffmann, Thomas-
item.contributorMEURIS, Marc-
item.contributorDe Meyer, Kristin-
item.fullcitationHellings, Geert; Eneman, Geert; BRAMMERTZ, Guy; Martens, Koen; Mitard, Jerome; Wang, Wei-E; Hoffmann, Thomas; MEURIS, Marc & De Meyer, Kristin (2010) Influence of interface traps on high-mobility channel performance. In: 2010 Silicon Nanoelectronics Workshop, SNW 2010, p. 1 -2 (Art N° 5562597).-
item.accessRightsClosed Access-
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