Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/31640| Title: | Influence of interface traps on high-mobility channel performance | Authors: | Hellings, Geert Eneman, Geert BRAMMERTZ, Guy Martens, Koen Mitard, Jerome Wang, Wei-E Hoffmann, Thomas MEURIS, Marc De Meyer, Kristin |
Issue Date: | 2010 | Source: | 2010 Silicon Nanoelectronics Workshop, SNW 2010, p. 1 -2 (Art N° 5562597) | Abstract: | A technique is presented and verified to predict the electrostatic degradation of MOSFET performance, due to interface traps and their energy distribution. It provides an estimate of the technology's sub-threshold slope degradation based on an extracted interface traps spectrum, without the need for transistor fabrication. | Keywords: | Telegraph;Low Frequency Noise;MOSFET | Document URI: | http://hdl.handle.net/1942/31640 | ISBN: | 978-1-4244-7727-2 | DOI: | 10.1109/SNW.2010.5562597 | Category: | C1 | Type: | Proceedings Paper |
| Appears in Collections: | Research publications |
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.