Catalytic forming gas anneal on III-V/Ge MOS systems

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31641

Title:	Catalytic forming gas anneal on III-V/Ge MOS systems
Authors:	Wang, W.-E. Lin, H.-C. BRAMMERTZ, Guy Delabie, A. Sioncke, S. Simoen, E. Caymax, M. MEURIS, Marc Heyns, M.
Issue Date:	2010
Source:	Materials Research Society Symposium Proceedings, p. 46 -52
Series/Report:	MRS Proceedings
Series/Report no.:	1194
Abstract:	Catalytic-FGA, a combination of the standard forming gas anneal with a catalytic metal gate, has been applied to study the hydrogen passivation of III-V/Ge MOS systems. Pd (or Pt) metal gate catalytically dissociates molecular hydrogen into atomic hydrogen atoms, which then diffuse through the dielectric layer and neutralize certain semiconductor/dielectric interfacial defects. MOS systems with various interfacial qualities, including lattice-matched (n/p) In0.53Ga0.47As/10nm ALD-Al2O3 (or ZrO2)/Pd capacitors, an undoped Ge/∼lnm GeO2/4nm ALD-Al2O3/Pt capacitor, and an nGe/8nm ALD-Al 2O3/Pt capacitor are fabricated to evaluate the effectiveness of C-FGA. © 2010 Materials Research Society.
Keywords:	Atomic hydrogen;Catalytic metal gates;Dielectric layer;Forming gas;Hydrogen passivation;Interfacial defect;Interfacial qualities;Lattice-matched;Metal gate;Molecular hydrogen;Aluminum;Capacitors;Dielectric materials;Hydrogen;Palladium;Passivation;Platinum;Carrier mobility
Document URI:	http://hdl.handle.net/1942/31641
ISBN:	9781617387548
DOI:	10.1557/PROC-1194-A07-06
Rights:	Materials Research Society 2010
Category:	C1
Type:	Proceedings Paper
Appears in Collections:	Research publications

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