Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31643
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dc.contributor.authorMolle, Alessandro-
dc.contributor.authorSpiga, Sabina-
dc.contributor.authorAndreozzi, Andrea-
dc.contributor.authorFanciulli, Marco-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMEURIS, Marc-
dc.date.accessioned2020-08-11T06:42:35Z-
dc.date.available2020-08-11T06:42:35Z-
dc.date.issued2008-
dc.date.submitted2020-07-30T09:49:18Z-
dc.identifier.citationApplied physics letters, 93 (13) (Art N° 133504)-
dc.identifier.urihttp://hdl.handle.net/1942/31643-
dc.description.abstractThe structural and chemical details of GeO(2)/Ge layers grown on In(0.15)Ga(0.85)As substrates by molecular beam deposition were studied in situ by diffraction and spectroscopic techniques. The formation of semiconductor-oxygen bonds at the Ge/In(0.15)Ga(0.85)As interface, which may play a decisive role in dictating the quality of the Ge passivation, was assessed after using two different surface preparations, namely Ar sputtering and atomic hydrogen cleaning. (C) 2008 American Institute of Physics.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights2008 American Institute of Physics-
dc.subject.otherATOMIC-HYDROGEN-
dc.subject.otherGATE STACK-
dc.subject.otherGAAS-
dc.titleStructure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructures-
dc.typeJournal Contribution-
dc.identifier.issue13-
dc.identifier.volume93-
local.bibliographicCitation.jcatA1-
dc.description.notesMolle, A (corresponding author), CNR INFM Lab Nazl MDM, Via C Olivetti 2, I-20041 Agrate Brianza, MI, Italy.-
dc.description.notesalessandro.molle@mdm.infm.ti-
local.publisher.placeCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1,-
local.publisher.placeMELVILLE, NY 11747-4501 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr133504-
dc.identifier.doi10.1063/1.2992560-
dc.identifier.isiWOS:000259794100109-
dc.contributor.orcidSpiga, Sabina/0000-0001-7293-7503; Fanciulli, Marco/0000-0003-2951-0859;-
dc.contributor.orcidMolle, Alessandro/0000-0002-3860-4120; Brammertz,-
dc.contributor.orcidGuy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Molle, Alessandro; Spiga, Sabina; Andreozzi, Andrea; Fanciulli, Marco] CNR INFM Lab Nazl MDM, I-20041 Agrate Brianza, MI, Italy.-
local.description.affiliation[Fanciulli, Marco] Univ Milan, Dipartimento Sci Mat, I-20041 Milan, Italy.-
local.description.affiliation[Brammertz, Guy; Meuris, Marc] IMEC, B-3001 Louvain, Belgium.-
item.fulltextWith Fulltext-
item.contributorMolle, Alessandro-
item.contributorSpiga, Sabina-
item.contributorAndreozzi, Andrea-
item.contributorFanciulli, Marco-
item.contributorBRAMMERTZ, Guy-
item.contributorMEURIS, Marc-
item.fullcitationMolle, Alessandro; Spiga, Sabina; Andreozzi, Andrea; Fanciulli, Marco; BRAMMERTZ, Guy & MEURIS, Marc (2008) Structure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructures. In: Applied physics letters, 93 (13) (Art N° 133504).-
item.accessRightsOpen Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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