Structure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructures

Abstract

The structural and chemical details of GeO(2)/Ge layers grown on In(0.15)Ga(0.85)As substrates by molecular beam deposition were studied in situ by diffraction and spectroscopic techniques. The formation of semiconductor-oxygen bonds at the Ge/In(0.15)Ga(0.85)As interface, which may play a decisive role in dictating the quality of the Ge passivation, was assessed after using two different surface preparations, namely Ar sputtering and atomic hydrogen cleaning. (C) 2008 American Institute of Physics.