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http://hdl.handle.net/1942/31647| Title: | Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution | Authors: | Lin, D. BRAMMERTZ, Guy Sioncke, S. Fleischmann, C. Delabie, A. Martens, K. Bender, H. Conard, T. Tseng, W. H. Lin, J. C. Wang, W. E. Temst, K. Vantomme, A. Mitard, J. Caymax, M. MEURIS, Marc Heyns, M. Hoffmann, T. |
Issue Date: | 2009 | Publisher: | IEEE | Source: | 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEEE, p. 300 -+ | Series/Report: | International Electron Devices Meeting | Abstract: | To address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400cm(2)/eV-s and 1300cm(2)/eV-s. Based on the duality found on the InGaAs/Ge MOS system, this approach aims to integrate the InGaAs/Ge MOSFET processes for high performance CMOS applications with an emphasis on progressive EOT scaling. | Notes: | Lin, D (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium. dlin@imec.be |
Document URI: | http://hdl.handle.net/1942/31647 | ISBN: | 978-1-4244-5639-0 | ISI #: | WOS:000279343900075 | Category: | C1 | Type: | Proceedings Paper |
| Appears in Collections: | Research publications |
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