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Title: | Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2 | Authors: | Afanas'ev, V. V. Stesmans, A. BRAMMERTZ, Guy Delabie, A. Sionke, S. O'Mahony, A. Povey, I. M. Pemble, M. E. O'Connor, E. Hurley, P. K. Newcomb, S. B. |
Issue Date: | 2009 | Publisher: | AMER INST PHYSICS | Source: | Applied physics letters, 94 (20) (Art N° 202110) | Abstract: | The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using internal photoemission and photoconductivity experiments. The energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the known bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. It finds support from both electron and hole photoemission data. Similarly to the GaAs case, electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction in the electron barrier at the semiconductor/oxide interface. | Notes: | Afanas'ev, VV (corresponding author), Univ Louvain, Dept Phys, Celestijnenlaan 200D, B-3001 Louvain, Belgium. valeri.afanasiev@fys.kuleuven.be |
Keywords: | alumina;atomic layer deposition;conduction bands;energy gap;gallium arsenide;hafnium compounds;III-V semiconductors;indium compounds;nanostructured materials;oxidation;photoconductivity;photoemission;semiconductor-insulator boundaries;valence bands;BAND OFFSETS;SEMICONDUCTORS | Document URI: | http://hdl.handle.net/1942/31648 | ISSN: | 0003-6951 | e-ISSN: | 1077-3118 | DOI: | 10.1063/1.3137187 | ISI #: | WOS:000266342800035 | Rights: | 2009 American Institute of Physics. | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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1.3137187.pdf | Published version | 662.76 kB | Adobe PDF | View/Open |
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