Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31649

Title:	Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates
Authors:	Molle, A. BRAMMERTZ, Guy Lamagna, L. Spiga, S. MEURIS, Marc Fanciulli, M.
Issue Date:	2010
Source:	Materials Research Society Symposium Proceedings, 1194, p. 65 -73
Series/Report:	MRS Proceedings
Series/Report no.:	1194
Abstract:	La-doped ZrO2 thin films were grown by O3based atomic layer deposition on III-V (GaAs, In0.15Ga0.85As) substrates. The direct oxide deposition and the insertion of a Ge passivation layer in between the oxide and the substrate are compared in terms of the resulting density of interface traps. An improved electrical quality of the Ge-passivated interfaces concerning the energy region close to the conduction band edge in the semiconductor band-gap is demonstrated through conductance maps at various temperatures and it is attributed to Ga-related interfacial defects. © 2010 Materials Research Society.
Keywords:	Atomic layer deposited;Band gaps;Conduction band edge;Electrical quality;Energy regions;GaAs;Interface quality;Interface traps;Interfacial defect;La-doped;Oxide deposition;Passivation layer;Atomic layer deposition;Electron mobility;Germanium;Passivation;Substrates
Document URI:	http://hdl.handle.net/1942/31649
ISBN:	9781617387548
DOI:	10.1557/PROC-1194-A08-10
Rights:	Materials Research Society 2010
Category:	C1
Type:	Proceedings Paper
Appears in Collections:	Research publications

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