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http://hdl.handle.net/1942/31649| Title: | Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates | Authors: | Molle, A. BRAMMERTZ, Guy Lamagna, L. Spiga, S. MEURIS, Marc Fanciulli, M. |
Issue Date: | 2010 | Source: | Materials Research Society Symposium Proceedings, 1194, p. 65 -73 | Series/Report: | MRS Proceedings | Series/Report no.: | 1194 | Abstract: | La-doped ZrO2 thin films were grown by O3based atomic layer deposition on III-V (GaAs, In0.15Ga0.85As) substrates. The direct oxide deposition and the insertion of a Ge passivation layer in between the oxide and the substrate are compared in terms of the resulting density of interface traps. An improved electrical quality of the Ge-passivated interfaces concerning the energy region close to the conduction band edge in the semiconductor band-gap is demonstrated through conductance maps at various temperatures and it is attributed to Ga-related interfacial defects. © 2010 Materials Research Society. | Keywords: | Atomic layer deposited;Band gaps;Conduction band edge;Electrical quality;Energy regions;GaAs;Interface quality;Interface traps;Interfacial defect;La-doped;Oxide deposition;Passivation layer;Atomic layer deposition;Electron mobility;Germanium;Passivation;Substrates | Document URI: | http://hdl.handle.net/1942/31649 | ISBN: | 9781617387548 | DOI: | 10.1557/PROC-1194-A08-10 | Rights: | Materials Research Society 2010 | Category: | C1 | Type: | Proceedings Paper |
| Appears in Collections: | Research publications |
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