Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

Abstract

Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature ( < 700 degrees C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600-650 and 500 degrees C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate ( > 5 angstrom/min). Trisilane permits the growth of Si at lower temperatures below 350 degrees C due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 degrees C are defective, irrespective of the carrier gas, pressure and precursor flow used. (C) 2010 Elsevier B.V. All rights reserved.