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http://hdl.handle.net/1942/31651
Title: | Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy | Authors: | Cantoro, M. BRAMMERTZ, Guy Richard, O. Bender, H. Clemente, F. Leys, M. Degroote, S. Caymax, M. Heyns, M. De Gendt, S. |
Issue Date: | 2009 | Publisher: | ELECTROCHEMICAL SOC INC | Source: | GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, ELECTROCHEMICAL SOC INC, p. 309 -329 | Series/Report: | ECS Transactions | Series/Report no.: | 19 | Abstract: | We report on the growth of surface-bound, vertically oriented I-D III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapour phase epitaxy. Control of nanowire features and growth directions is achieved by tuning of the growth conditions. Grown nanostructures are characterised by scanning and transmission electron microscopy, X-ray diffraction and Raman spectroscopy. | Notes: | Cantoro, M (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium. cantoro@imec.be |
Keywords: | OPTICAL-PROPERTIES;TWINNING SUPERLATTICES;SILICON NANOWIRES;INDIUM ARSENIDE;SEMICONDUCTOR;GAAS;MECHANISM;PHOTONICS;GOLD;GAN | Document URI: | http://hdl.handle.net/1942/31651 | ISBN: | 978-1-56677-713-1 | DOI: | 10.1149/1.3119555 | ISI #: | WOS:000272592300034 | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
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