Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy

Abstract

We report on the growth of surface-bound, vertically oriented I-D III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapour phase epitaxy. Control of nanowire features and growth directions is achieved by tuning of the growth conditions. Grown nanostructures are characterised by scanning and transmission electron microscopy, X-ray diffraction and Raman spectroscopy.