Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31655
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dc.contributor.authorHeyns, Marc-
dc.contributor.authorBellenger, Florence-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorCaymax, Matty-
dc.contributor.authorDe Jaeger, Brice-
dc.contributor.authorDelabie, Annelies-
dc.contributor.authorEneman, Geert-
dc.contributor.authorHoussa, Michel-
dc.contributor.authorLin, Dennis-
dc.contributor.authorMartens, Koen-
dc.contributor.authorMerckling, Clement-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorMitard, Jerome-
dc.contributor.authorPenaud, Julien-
dc.contributor.authorPourtois, Geoffrey-
dc.contributor.authorScarrozza, Marco-
dc.contributor.authorSimoen, Eddy-
dc.contributor.authorSioncke, Sonja-
dc.contributor.authorVan Elshocht, Sven-
dc.contributor.authorWang, Wei-E-
dc.date.accessioned2020-08-11T12:33:03Z-
dc.date.available2020-08-11T12:33:03Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T08:44:58Z-
dc.identifier.citationPHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, ELECTROCHEMICAL SOC INC, p. 51 -65-
dc.identifier.isbn978-1-60768-093-2-
dc.identifier.isbn978-1-56677-743-8-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/1942/31655-
dc.description.abstractThe use of Ge and III/V materials for future CMOS applications is investigated. Passivation of the Ge surface can be obtained by either GeO2 or a thin Si layer. Short channel Ge pMOS devices with low EOT are fabricated. The passivation of III/V materials is a very challenging topic. Some critical issues and passivation schemes are investigated and the performance of inversion channel MOSFET's on In0.53Ga0.47As with ALD Al2O3 is discussed.-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.ispartofseriesECS Transactions-
dc.subject.otherMOLECULAR-BEAM EPITAXY-
dc.subject.otherGATE-
dc.subject.otherSEMICONDUCTORS-
dc.subject.otherSEGREGATION-
dc.subject.otherMOSFET-
dc.titleHigh-kappa Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOS-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedateOCT 05-07, 2009-
local.bibliographicCitation.conferencename7th International Symposium on High Dielectric Constant Materials and Gate Stacks held during the 216th Meeting of The Electrochemical-Society-
local.bibliographicCitation.conferenceplaceVienna, AUSTRIA-
dc.identifier.epage65-
dc.identifier.spage51-
local.bibliographicCitation.jcatC1-
local.publisher.place65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.doi10.1149/1.3206606-
dc.identifier.isiWOS:000338086300005-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; heyns, marc/0000-0002-1199-4341;-
dc.contributor.orcidMartens, Koen/0000-0001-7135-5536; Brammertz, Guy/0000-0003-1404-7339;-
dc.contributor.orcidhoussa, michel/0000-0003-1844-3515-
local.provider.typewosris-
local.bibliographicCitation.btitlePHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7-
local.uhasselt.uhpubno-
local.description.affiliation[Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven] IMEC, B-3001 Leuven, Belgium.-
local.description.affiliation[Houssa, Michel] Katholieke Univ Leuven, Dept Phys, B-3001 Leuven, Belgium.-
local.description.affiliation[Penaud, Julien] Riber Assignee IMEC, B-3001 Leuven, Belgium.-
local.description.affiliation[Wang, Wei-E] INTEL Assignee IMEC, B-3001 Leuven, Belgium.-
item.fulltextNo Fulltext-
item.contributorHeyns, Marc-
item.contributorBellenger, Florence-
item.contributorBRAMMERTZ, Guy-
item.contributorCaymax, Matty-
item.contributorDe Jaeger, Brice-
item.contributorDelabie, Annelies-
item.contributorEneman, Geert-
item.contributorHoussa, Michel-
item.contributorLin, Dennis-
item.contributorMartens, Koen-
item.contributorMerckling, Clement-
item.contributorMEURIS, Marc-
item.contributorMitard, Jerome-
item.contributorPenaud, Julien-
item.contributorPourtois, Geoffrey-
item.contributorScarrozza, Marco-
item.contributorSimoen, Eddy-
item.contributorSioncke, Sonja-
item.contributorVan Elshocht, Sven-
item.contributorWang, Wei-E-
item.fullcitationHeyns, Marc; Bellenger, Florence; BRAMMERTZ, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; MEURIS, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven & Wang, Wei-E (2009) High-kappa Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOS. In: PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, ELECTROCHEMICAL SOC INC, p. 51 -65.-
item.accessRightsClosed Access-
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