Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/31658
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Martens, Koen | - |
dc.contributor.author | Chui, Chi On | - |
dc.contributor.author | BRAMMERTZ, Guy | - |
dc.contributor.author | De Jaeger, Brice | - |
dc.contributor.author | Kuzum, Duygu | - |
dc.contributor.author | MEURIS, Marc | - |
dc.contributor.author | Heyns, Marc M. | - |
dc.contributor.author | Krishnamohan, Tejas | - |
dc.contributor.author | Saraswat, Krishna | - |
dc.contributor.author | MAES, Herman | - |
dc.contributor.author | Groeseneken, Guido | - |
dc.date.accessioned | 2020-08-11T12:41:56Z | - |
dc.date.available | 2020-08-11T12:41:56Z | - |
dc.date.issued | 2008 | - |
dc.date.submitted | 2020-07-30T08:19:34Z | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, 55 (2) , p. 547 -556 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31658 | - |
dc.description.abstract | "Conventional" techniques and related capacitance-voltage characteristic interpretation were established to evaluate interface trap density on Si substrates. We show that blindly applying these techniques on alternative substrates can lead to incorrect conclusions. It is possible to both under- and overestimate the interface trap density by more than an order of magnitude. Pitfalls jeopardizing capacitance- and conductance-voltage characteristic interpretation for alternative semiconductor MOS are elaborated. We show how the conductance method, the most reliable and widely used interface trap density extraction method for Si, can be adapted and made reliable for alternative semiconductors while maintaining its simplicity. | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject.other | III-V | - |
dc.subject.other | alternative substrates | - |
dc.subject.other | conductance method | - |
dc.subject.other | electrical | - |
dc.subject.other | characterization | - |
dc.subject.other | Ge MOSFET | - |
dc.subject.other | interface trap density extraction | - |
dc.subject.other | Nicollian-Goetzberger | - |
dc.title | On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 556 | - |
dc.identifier.issue | 2 | - |
dc.identifier.spage | 547 | - |
dc.identifier.volume | 55 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Martens, K (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium. | - |
dc.description.notes | martensk@imec.be; chui@ee.ucla.edu; Guy.Brammertz@imec.be; | - |
dc.description.notes | Biiee.DeJaeger@imec.be; duygu@stanford.edu; Marc.Meuris@imec.be; | - |
dc.description.notes | Marc.Heyns@imee.be; tejask@stanford.edu; saraswat@stanford.edu; | - |
dc.description.notes | maesh@imec.be; guido.groeseneken@imec.be | - |
local.publisher.place | 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1109/TED.2007.912365 | - |
dc.identifier.isi | WOS:000252688300013 | - |
dc.contributor.orcid | Martens, Koen/0000-0001-7135-5536; heyns, marc/0000-0002-1199-4341; | - |
dc.contributor.orcid | Chui, Chi On/0000-0001-9413-2511; Groeseneken, | - |
dc.contributor.orcid | Guido/0000-0003-3763-2098; Brammertz, Guy/0000-0003-1404-7339 | - |
dc.identifier.eissn | - | |
dc.identifier.eissn | 1557-9646 | - |
local.provider.type | wosris | - |
local.uhasselt.uhpub | no | - |
local.description.affiliation | [Martens, Koen; Kuzum, Duygu; Krishnamohan, Tejas; Saraswat, Krishna] Stanford Univ, Palo Alto, CA 94305 USA. | - |
local.description.affiliation | [Martens, Koen; Maes, Herman E.; Groeseneken, Guido] Katholieke Univ Leuven, EAST Lab, B-3001 Louvain, Belgium. | - |
local.description.affiliation | [Chui, Chi On] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA. | - |
local.description.affiliation | [Martens, Koen; Brammertz, Guy; De Jaeger, Brice; Meuris, Marc; Heyns, Marc M.; Maes, Herman E.; Groeseneken, Guido] IMEC, B-3001 Louvain, Belgium. | - |
local.description.affiliation | [Krishnamohan, Tejas] Intel Corp, Santa Clara, CA 95054 USA. | - |
item.fulltext | No Fulltext | - |
item.accessRights | Closed Access | - |
item.fullcitation | Martens, Koen; Chui, Chi On; BRAMMERTZ, Guy; De Jaeger, Brice; Kuzum, Duygu; MEURIS, Marc; Heyns, Marc M.; Krishnamohan, Tejas; Saraswat, Krishna; MAES, Herman & Groeseneken, Guido (2008) On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 55 (2) , p. 547 -556. | - |
item.contributor | Martens, Koen | - |
item.contributor | Chui, Chi On | - |
item.contributor | BRAMMERTZ, Guy | - |
item.contributor | De Jaeger, Brice | - |
item.contributor | Kuzum, Duygu | - |
item.contributor | MEURIS, Marc | - |
item.contributor | Heyns, Marc M. | - |
item.contributor | Krishnamohan, Tejas | - |
item.contributor | Saraswat, Krishna | - |
item.contributor | MAES, Herman | - |
item.contributor | Groeseneken, Guido | - |
crisitem.journal.issn | 0018-9383 | - |
crisitem.journal.eissn | 1557-9646 | - |
Appears in Collections: | Research publications |
SCOPUSTM
Citations
324
checked on Sep 5, 2020
WEB OF SCIENCETM
Citations
341
checked on Sep 27, 2024
Page view(s)
34
checked on Jun 28, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.