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http://hdl.handle.net/1942/31658
Title: | On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates | Authors: | Martens, Koen Chui, Chi On BRAMMERTZ, Guy De Jaeger, Brice Kuzum, Duygu MEURIS, Marc Heyns, Marc M. Krishnamohan, Tejas Saraswat, Krishna MAES, Herman Groeseneken, Guido |
Issue Date: | 2008 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Source: | IEEE TRANSACTIONS ON ELECTRON DEVICES, 55 (2) , p. 547 -556 | Abstract: | "Conventional" techniques and related capacitance-voltage characteristic interpretation were established to evaluate interface trap density on Si substrates. We show that blindly applying these techniques on alternative substrates can lead to incorrect conclusions. It is possible to both under- and overestimate the interface trap density by more than an order of magnitude. Pitfalls jeopardizing capacitance- and conductance-voltage characteristic interpretation for alternative semiconductor MOS are elaborated. We show how the conductance method, the most reliable and widely used interface trap density extraction method for Si, can be adapted and made reliable for alternative semiconductors while maintaining its simplicity. | Notes: | Martens, K (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium. martensk@imec.be; chui@ee.ucla.edu; Guy.Brammertz@imec.be; Biiee.DeJaeger@imec.be; duygu@stanford.edu; Marc.Meuris@imec.be; Marc.Heyns@imee.be; tejask@stanford.edu; saraswat@stanford.edu; maesh@imec.be; guido.groeseneken@imec.be |
Keywords: | III-V;alternative substrates;conductance method;electrical;characterization;Ge MOSFET;interface trap density extraction;Nicollian-Goetzberger | Document URI: | http://hdl.handle.net/1942/31658 | ISSN: | 0018-9383 | e-ISSN: | 1557-9646 | DOI: | 10.1109/TED.2007.912365 | ISI #: | WOS:000252688300013 | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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