Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31660
Title: Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy
Authors: Cantoro, M.
BRAMMERTZ, Guy 
Richard, O.
Bender, H.
Clemente, F.
Leys, M.
Degroote, S.
Caymax, M.
Heyns, M.
De Gendt, S.
Issue Date: 2009
Publisher: ELECTROCHEMICAL SOC INC
Source: Journal of the Electrochemical Society, 156 (11) , p. H860 -H868
Abstract: We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapor-phase epitaxy. Control of nanowire features and growth directions is achieved by tuning the growth conditions. Grown nanostructures are characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3222852] All rights reserved.
Notes: Cantoro, M (corresponding author), IMEC VZW, B-3001 Louvain, Belgium.
cantoro@imec.be
Keywords: SEMICONDUCTOR NANOWIRES;OPTICAL-PROPERTIES;TWINNING SUPERLATTICES;SILICON NANOWIRES;INDIUM ARSENIDE;V NANOWIRES;INAS;GAAS;SI;HETEROSTRUCTURES
Document URI: http://hdl.handle.net/1942/31660
ISSN: 0013-4651
e-ISSN: 1945-7111
DOI: 10.1149/1.3222852
ISI #: WOS:000270457600068
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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