Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31660
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dc.contributor.authorCantoro, M.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorRichard, O.-
dc.contributor.authorBender, H.-
dc.contributor.authorClemente, F.-
dc.contributor.authorLeys, M.-
dc.contributor.authorDegroote, S.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorHeyns, M.-
dc.contributor.authorDe Gendt, S.-
dc.date.accessioned2020-08-11T13:11:46Z-
dc.date.available2020-08-11T13:11:46Z-
dc.date.issued2009-
dc.date.submitted2020-07-30T08:29:47Z-
dc.identifier.citationJournal of the Electrochemical Society, 156 (11) , p. H860 -H868-
dc.identifier.urihttp://hdl.handle.net/1942/31660-
dc.description.abstractWe report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapor-phase epitaxy. Control of nanowire features and growth directions is achieved by tuning the growth conditions. Grown nanostructures are characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3222852] All rights reserved.-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subject.otherSEMICONDUCTOR NANOWIRES-
dc.subject.otherOPTICAL-PROPERTIES-
dc.subject.otherTWINNING SUPERLATTICES-
dc.subject.otherSILICON NANOWIRES-
dc.subject.otherINDIUM ARSENIDE-
dc.subject.otherV NANOWIRES-
dc.subject.otherINAS-
dc.subject.otherGAAS-
dc.subject.otherSI-
dc.subject.otherHETEROSTRUCTURES-
dc.titleControlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateMAY 24-29, 2009-
local.bibliographicCitation.conferencename215th Electrochemistry-Society Meeting-
local.bibliographicCitation.conferenceplaceSan Francisco, CA-
dc.identifier.epageH868-
dc.identifier.issue11-
dc.identifier.spageH860-
dc.identifier.volume156-
local.bibliographicCitation.jcatA1-
dc.description.notesCantoro, M (corresponding author), IMEC VZW, B-3001 Louvain, Belgium.-
dc.description.notescantoro@imec.be-
local.publisher.place65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1149/1.3222852-
dc.identifier.isiWOS:000270457600068-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Cantoro, M.; Brammertz, G.; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M.; De Gendt, S.] IMEC VZW, B-3001 Louvain, Belgium.-
local.description.affiliation[Cantoro, M.] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium.-
local.description.affiliation[Heyns, M.] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium.-
local.description.affiliation[De Gendt, S.] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium.-
item.fullcitationCantoro, M.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Clemente, F.; Leys, M.; Degroote, S.; Caymax, M.; Heyns, M. & De Gendt, S. (2009) Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy. In: Journal of the Electrochemical Society, 156 (11) , p. H860 -H868.-
item.accessRightsClosed Access-
item.contributorCantoro, M.-
item.contributorBRAMMERTZ, Guy-
item.contributorRichard, O.-
item.contributorBender, H.-
item.contributorClemente, F.-
item.contributorLeys, M.-
item.contributorDegroote, S.-
item.contributorCaymax, M.-
item.contributorHeyns, M.-
item.contributorDe Gendt, S.-
item.fulltextNo Fulltext-
crisitem.journal.issn0013-4651-
crisitem.journal.eissn1945-7111-
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