Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31660

Title:	Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy
Authors:	Cantoro, M. BRAMMERTZ, Guy Richard, O. Bender, H. Clemente, F. Leys, M. Degroote, S. Caymax, M. Heyns, M. De Gendt, S.
Issue Date:	2009
Publisher:	ELECTROCHEMICAL SOC INC
Source:	Journal of the Electrochemical Society, 156 (11) , p. H860 -H868
Abstract:	We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapor-phase epitaxy. Control of nanowire features and growth directions is achieved by tuning the growth conditions. Grown nanostructures are characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3222852] All rights reserved.
Notes:	Cantoro, M (corresponding author), IMEC VZW, B-3001 Louvain, Belgium. cantoro@imec.be
Keywords:	SEMICONDUCTOR NANOWIRES;OPTICAL-PROPERTIES;TWINNING SUPERLATTICES;SILICON NANOWIRES;INDIUM ARSENIDE;V NANOWIRES;INAS;GAAS;SI;HETEROSTRUCTURES
Document URI:	http://hdl.handle.net/1942/31660
ISSN:	0013-4651
e-ISSN:	1945-7111
DOI:	10.1149/1.3222852
ISI #:	WOS:000270457600068
Category:	A1
Type:	Journal Contribution
Appears in Collections:	Research publications

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