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http://hdl.handle.net/1942/3206
Title: | Switching quality of thin-film PZT ferroelectric capacitors | Authors: | Wouters, DJ NOUWEN, Ria Norga, GJ Bartic, A. VAN POUCKE, Lucien Maes, HE |
Issue Date: | 1998 | Publisher: | E D P SCIENCES | Source: | JOURNAL DE PHYSIQUE IV, 8(P9). p. 205-208 | Abstract: | The switching quality of PZT thin-film ferroelectric capacitors was studied, using hysteresis and pulse switching measurements. The ferroelectric properties of epitaxial Pt/PZT/LSCO/MgO capacitors are strongly affected by the LSCO material. A strong deviation between hysteresis and pulse measurements has been observed for one type of LSCO, corresponding to a strong relaxation of (oxygen-vacancy) space charge polarization. On the other hand, polycrystalline Pt/PZT/Pt show very rectangular hysteresis loops with high P-r and pulse measurements reveal high speed switching and absence of rapid depolarization effects. These results prove the very high switching quality of Pt/PZT/Pt capacitors, required for their application as non-volatile memory elements. | Notes: | IMEC, B-3001 Heverlee, Belgium. Limburgs Univ Ctr, B-3590 Diepenbeek, Belgium.Wouters, DJ, IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium. | Document URI: | http://hdl.handle.net/1942/3206 | ISI #: | 000078118100039 | Type: | Journal Contribution | Validations: | ecoom 2000 |
Appears in Collections: | Research publications |
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