Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3206
Title: Switching quality of thin-film PZT ferroelectric capacitors
Authors: Wouters, DJ
NOUWEN, Ria 
Norga, GJ
Bartic, A.
VAN POUCKE, Lucien 
Maes, HE
Issue Date: 1998
Publisher: E D P SCIENCES
Source: JOURNAL DE PHYSIQUE IV, 8(P9). p. 205-208
Abstract: The switching quality of PZT thin-film ferroelectric capacitors was studied, using hysteresis and pulse switching measurements. The ferroelectric properties of epitaxial Pt/PZT/LSCO/MgO capacitors are strongly affected by the LSCO material. A strong deviation between hysteresis and pulse measurements has been observed for one type of LSCO, corresponding to a strong relaxation of (oxygen-vacancy) space charge polarization. On the other hand, polycrystalline Pt/PZT/Pt show very rectangular hysteresis loops with high P-r and pulse measurements reveal high speed switching and absence of rapid depolarization effects. These results prove the very high switching quality of Pt/PZT/Pt capacitors, required for their application as non-volatile memory elements.
Notes: IMEC, B-3001 Heverlee, Belgium. Limburgs Univ Ctr, B-3590 Diepenbeek, Belgium.Wouters, DJ, IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium.
Document URI: http://hdl.handle.net/1942/3206
ISI #: 000078118100039
Type: Journal Contribution
Validations: ecoom 2000
Appears in Collections:Research publications

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