Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3316
Title: In-situ study of the degradation behaviour of GaAs MESFETs for hi-rel applications
Authors: PETERSEN, Rainer 
DE CEUNINCK, Ward 
DE SCHEPPER, Luc 
Gregoris, G
Issue Date: 1997
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Source: MICROELECTRONICS AND RELIABILITY, 37(10-11). p. 1655-1658
Abstract: In this paper, an accelerated ageing experiment on GaAs MESFET's is presented applying a novel in-situ technique on a reduced time scale. The ageing behaviour of several de parameters is monitored continuously while thermoelectrical stress is applied. As different ageing processes leave distinct fingerprints in the degradation curves, the increased measurement resolution and data density, which are typical for in-situ measurements, provide additional information compared with conventional ex-situ tests. The result of the numerical analysis of the experimental data is presented, which provide an initial basis for comparison with conventional data and lifetime prediction.
Notes: ALCATEL ESPACE,F-31037 TOULOUSE,FRANCE.Petersen, R, LIMBURGS UNIV CTR,INST MAT RES,DIV MAT PHYS,UNIV CAMPUS,WETENSCHAPSPK 1,B-3590 DIEPENBEEK,BELGIUM.
Document URI: http://hdl.handle.net/1942/3316
DOI: 10.1016/S0026-2714(97)00132-7
ISI #: A1997YB68300056
Type: Journal Contribution
Appears in Collections:Research publications

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