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http://hdl.handle.net/1942/3373
Title: | Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry | Authors: | COSEMANS, Patrick Peter D'OLIESLAEGER, Marc DE CEUNINCK, Ward DE SCHEPPER, Luc STALS, Lambert |
Issue Date: | 1996 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | MICROELECTRONICS AND RELIABILITY, 36(11-12). p. 1699-1702 | Abstract: | The general goal of this work is to get a better insight in the different microstructural processes taking place in blanket Al(Si)(Cu) metallisations under variable conditions. Using analytical transmission electron microscopy and secondary ion mass spectrometry stable theta-CuAl2 precipitates are found distributed inhomogeneously in the z-direction of the metallisation with a peak near the substrate side of the metallisation. Additional heating creates larger theta-CuAl2 precipitates distributed inhomogeneously in the z-direction with a peak near the surface of the metallisation as well as in the vicinity of the substrate. Copyright (C) 1996 Elsevier Science Ltd | Notes: | Cosemans, P, LIMBURGS UNIV CTR,INST MAT RES,DIV MAT PHYS,UNIV CAMPUS,WETENSCHAPSPK 1,B-3590 DIEPENBEEK,BELGIUM. | Document URI: | http://hdl.handle.net/1942/3373 | DOI: | 10.1016/0026-2714(96)00177-1 | ISI #: | A1996VN50200022 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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