Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3609
Title: An activation-energy study of the microstructural changes in al-1-percent-si interconnects
Authors: Stulens, Herwig
KNUYT, Gilbert 
DE CEUNINCK, Ward 
DE SCHEPPER, Luc 
STALS, Lambert 
Issue Date: 1994
Publisher: AMER INST PHYSICS
Source: JOURNAL OF APPLIED PHYSICS, 75(4). p. 2270-2277
Abstract: There are several reasons to believe that the microstructural changes in Al-Si interconnects has to be described in terms of a spectrum of activation energies rather than in terms of a single activation energy. In this article, a method is presented to extract a spectrum of activation energies from an isothermal and a constant heating rate experiment. The formalism was applied to the relaxation behavior of passivated Al-1%Si interconnects. The method of analysis shows that the microstructural relaxation mechanisms in these interconnects are characterized by a narrow spectrum, centered at an energy of about 1.2 eV.
Notes: STULENS, H, LIMBURGS UNIV CENTRUM,INST MAT RES,DIV MAT PHYS,SCI PK,B-3590 DIEPENBEEK,BELGIUM.
Document URI: http://hdl.handle.net/1942/3609
DOI: 10.1063/1.356291
ISI #: A1994MX65400064
Type: Journal Contribution
Appears in Collections:Research publications

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