Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/36168
Title: Practical Challenges of High-Power IGBT’s I-V Curve Measurement and Its Importance in Reliability Analysis
Authors: ALAVI, Omid 
VAN CAPPELLEN, Leander 
DE CEUNINCK, Ward 
DAENEN, Michael 
Issue Date: 2021
Publisher: MDPI
Source: Electronics, 10 (17) (Art N° 2095)
Abstract: This paper examines the practical challenges of simplified setups aimed at achieving high-power IGBTs' I-C-V-CE curve. The slope of this I-V curve (which is defined as on-resistance R-CE) and the point where the V-CE-V-GE curve visibly bends (threshold gate voltage) can be suitable failure precursor parameters to determine an IGBT's health condition. A simplified/affordable design for these specific measurements can be used for in-situ condition monitoring or field testing of switching devices. First, the possible I-V curve measurement methods are discussed in detail in order to prevent self-heating. The selected design includes two IGBTs in which the high-side IGBT was the device under test (DUT) with a constant gate voltage (V-GE) of 15 V. Then, the low-side IGBT was switched by a short pulse (50 mu s) to impose a high-current pulse on the DUT. The V-CE-V-GE curve was also extracted as an important failure-precursor indicator. In the next stage, a power-cycling test was performed, and the impact of degradation on the IGBT was analyzed by these measurement methods. The results show that after 18,000 thermal cycles, a visible shift in I-V curve can be seen. The internal resistance increased by 13%, while the initial collector-emitter voltage and voltage at the knee point in the V-CE-V-GE curve slightly changed. It is likely that in our case, during the performed power-cycling test and aging process, the bond wires were most affected, but this hypothesis needs further investigation.
Notes: Alavi, O (corresponding author), Hasselt Univ, IMO IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.; Alavi, O (corresponding author), IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium.; Alavi, O (corresponding author), EnergyVille, Thor Pk 8310, B-3600 Genk, Belgium.
omid.alavi@uhasselt.be; leander.vancappellen@uhasselt.be;
ward.deceuninck@uhasselt.be; michael.daenen@uhasselt.be
Keywords: accelerated aging; electronic packaging thermal management; lifetime;estimation; power electronics; semiconductor device reliability
Document URI: http://hdl.handle.net/1942/36168
e-ISSN: 2079-9292
DOI: 10.3390/electronics10172095
ISI #: WOS:000694063700001
Rights: Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/
Category: A1
Type: Journal Contribution
Validations: ecoom 2022
Appears in Collections:Research publications

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