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Title: | Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts | Authors: | FIRAT, Meric Radhakrishnan, Hariharsudan Sivaramakrishnan Payo, Maria Recaman CHOULAT, Patrick Badran, Hussein VAN DER HEIDE, Arvid GOVAERTS, Jonathan DUERINCKX, Filip TOUS, Loic Hajjiah, Ali POORTMANS, Jef |
Issue Date: | 2022 | Publisher: | ELSEVIER | Source: | SOLAR ENERGY MATERIALS AND SOLAR CELLS, 236 (Art N° 111544) | Abstract: | The potential of passivating contacts incorporating in situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films grown by low pressure chemical vapor deposition (LPCVD) is demonstrated in this work by integrating these layers at the rear side of large-area (241.3 cm(2)) bifacial n-type Tunnel Oxide Passivated Contact (nTOPCon) solar cells with diffused front emitter and screen-printed contacts. In situ doped poly-Si films are studied as their use could simplify the production of industrial n-TOPCon solar cells compared to the common approach relying on ex situ doping of intrinsic LPCVD poly-Si films. The developed poly-Si passivating contacts exhibited excellent characteristics with low recombination current densities in passivated and screen-printing metallized regions down to 2.3 fA/cm(2) and 65.8 fA/cm(2), respectively, and a low contact resistivity of 2.0 m Omega.cm(2). For reaching the best passivating contact characteristics and high solar cell efficiencies, a poly-Si film thickness of 150-200 nm was found to be optimal while a polished rear surface morphology was found to be beneficial. The best solar cell reached a certified power conversion efficiency of 23.01% along with a high open circuit voltage of 691.7 mV, enabled by the passivating contacts with the in situ doped poly-Si films. 1-cell glass-glass laminates were also fabricated with the developed solar cells, which showed no loss in their power output both upon 400 thermal cycles and after 1000 h of damp heat testing. Lastly, a roadmap is presented, indicating strategies to achieve efficiencies up to 25.5% with n-TOPCon solar cells incorporating the in situ P-doped LPCVD poly-Si films. | Notes: | Firat, M (corresponding author), Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium. meric.firat@imec.be |
Keywords: | Passivating contacts;TOPCon;Solar cells;Polysilicon;LPCVD;In situ phosphorus doping | Document URI: | http://hdl.handle.net/1942/36960 | ISSN: | 0927-0248 | e-ISSN: | 1879-3398 | DOI: | 10.1016/j.solmat.2021.111544 | ISI #: | WOS:000761233600003 | Rights: | 2021 Elsevier B.V. All rights reserved | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2023 |
Appears in Collections: | Research publications |
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Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts.pdf Restricted Access | Published version | 5.82 MB | Adobe PDF | View/Open Request a copy |
Unmarked Revised Manuscript - Corrected.pdf | Peer-reviewed author version | 1 MB | Adobe PDF | View/Open |
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