Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/36960
Title: Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts
Authors: FIRAT, Meric 
Radhakrishnan, Hariharsudan Sivaramakrishnan
Payo, Maria Recaman
CHOULAT, Patrick 
Badran, Hussein
VAN DER HEIDE, Arvid 
GOVAERTS, Jonathan 
DUERINCKX, Filip 
TOUS, Loic 
Hajjiah, Ali
POORTMANS, Jef 
Issue Date: 2022
Publisher: ELSEVIER
Source: Solar Energy Materials and Solar Cells, 236 (Art N° 111544)
Abstract: The potential of passivating contacts incorporating in situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films grown by low pressure chemical vapor deposition (LPCVD) is demonstrated in this work by integrating these layers at the rear side of large-area (241.3 cm(2)) bifacial n-type Tunnel Oxide Passivated Contact (nTOPCon) solar cells with diffused front emitter and screen-printed contacts. In situ doped poly-Si films are studied as their use could simplify the production of industrial n-TOPCon solar cells compared to the common approach relying on ex situ doping of intrinsic LPCVD poly-Si films. The developed poly-Si passivating contacts exhibited excellent characteristics with low recombination current densities in passivated and screen-printing metallized regions down to 2.3 fA/cm(2) and 65.8 fA/cm(2), respectively, and a low contact resistivity of 2.0 m Omega.cm(2). For reaching the best passivating contact characteristics and high solar cell efficiencies, a poly-Si film thickness of 150-200 nm was found to be optimal while a polished rear surface morphology was found to be beneficial. The best solar cell reached a certified power conversion efficiency of 23.01% along with a high open circuit voltage of 691.7 mV, enabled by the passivating contacts with the in situ doped poly-Si films. 1-cell glass-glass laminates were also fabricated with the developed solar cells, which showed no loss in their power output both upon 400 thermal cycles and after 1000 h of damp heat testing. Lastly, a roadmap is presented, indicating strategies to achieve efficiencies up to 25.5% with n-TOPCon solar cells incorporating the in situ P-doped LPCVD poly-Si films.
Notes: Firat, M (corresponding author), Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium.
meric.firat@imec.be
Keywords: Passivating contacts;TOPCon;Solar cells;Polysilicon;LPCVD;In situ phosphorus doping
Document URI: http://hdl.handle.net/1942/36960
ISSN: 0927-0248
e-ISSN: 1879-3398
DOI: 10.1016/j.solmat.2021.111544
ISI #: WOS:000761233600003
Rights: 2021 Elsevier B.V. All rights reserved
Category: A1
Type: Journal Contribution
Validations: ecoom 2023
Appears in Collections:Research publications

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