Electric-field relaxation in prolonged-time photocurrent experiments

Abstract

The influence of the progressive electric field relaxation on the transient photocurrent for intrinsic and B-doped a-Si:H samples is investigated. The photocurrent measurements are compared with the voltage sweep-out experiments and with mathematical simulations of the photocurrent obtained from the numerical solution of the multiple trapping model. Beyond the dielectric relaxation a current due to the charge release from deep traps is identified.