Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/38135
Title: Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells
Authors: SHARMA, Rajiv 
Alleva, Alessandro
Hajjiah, Ali
SIVARAMAKRISHNAN RADHAKRISHNAN, Hariharsudan 
POORTMANS, Jef 
Issue Date: 2022
Publisher: AMER CHEMICAL SOC
Source: ACS Applied Energy Materials, 5 (8) , p. 9994 -10001
Abstract: For application in high-efficiency silicon solar cells bearing SiOx-based passivating contacts, we have developed 100 nm thick, PECVD Si-rich amorphous films, capable of being processed in industrial furnaces without blistering, by incorporating adequate amounts of each of C, N, and O in the films during PECVD. We found that non-blistering of the films is a result of the low intrinsic stress (compressive) in the films and not due to a low H content, which, in fact, is much higher in the non-blistering films than in the C-, N-, and O-free films. Among the three types of nonblistering Si-rich amorphous films, we conclude that the O-incorporated one is the most suitable for application in SiOx-based passivating contacts owing to the film's high excess Si content and ability to crystallize.
Notes: Sharma, R (corresponding author), Imo Imomec, IMEC, B-3600 Genk, Belgium.; Sharma, R (corresponding author), EnergyVille, Imo Imomec, B-3600 Genk, Belgium.; Sharma, R (corresponding author), Hasselt Univ, Imo Imomec, B-3500 Hasselt, Belgium.; Sharma, R (corresponding author), Katholieke Univ Leuven, B-3001 Leuven, Belgium.
rajiv.sharma@imec.be
Keywords: blistering;a-Si:H;PECVD;stress;poly-Si/SiOx contact;silicon solar cells
Document URI: http://hdl.handle.net/1942/38135
ISSN: 2574-0962
DOI: 10.1021/acsaem.2c01631
ISI #: 000842981400001
Rights: 2022 American Chemical Society
Category: A1
Type: Journal Contribution
Validations: ecoom 2023
Appears in Collections:Research publications

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