Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/4163
Title: Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy
Authors: Van Gestel, D.
Romero, M. J.
Gordon, I.
Carnel, L.
D'HAEN, Jan 
Beaucarne, Guy
Al-Jassim, M.
Poortmans, J.
Issue Date: 2007
Publisher: AMER INST PHYSICS
Source: APPLIED PHYSICS LETTERS, 90(9)
Abstract: Defect etching revealed a very large density (similar to 10(9) cm(-2)) of intragrain defects in polycrystalline silicon (pc-Si) layers obtained through aluminum-induced crystallization of amorphous Si and epitaxy. Electron-beam-induced current measurements showed a strong recombination activity at these defects. Cathodoluminescence measurements showed the presence of two deep-level radiative transitions (0.85 and 0.93 eV) with a relative intensity varying from grain to grain. These results indicate that the unexpected quasi-independence on the grain size of the open-circuit voltage of these pc-Si solar cells is due to the presence of numerous electrically active intragrain defects. (c) 2007 American Institute of Physics.
Notes: IMEC, B-3001 Louvain, Belgium. Natl Renewable Energy Lab, Golden, CO 80401 USA. Hasselt Univ, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. Natl Renewable Energy Lab, Golden, CO 80401 USA.Van Gestel, D, IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.dries.vangestel@imec.be
Document URI: http://hdl.handle.net/1942/4163
ISSN: 0003-6951
e-ISSN: 1077-3118
DOI: 10.1063/1.2709643
ISI #: 000244591700042
Category: A1
Type: Journal Contribution
Validations: ecoom 2008
Appears in Collections:Research publications

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