Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/43345
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dc.contributor.authorChen, Xinyue-
dc.contributor.authorDong, Ximan-
dc.contributor.authorZhang , Chuyan-
dc.contributor.authorZhu, Meng-
dc.contributor.authorAHMED, Essraa-
dc.contributor.authorGauquelin, Nicolas-
dc.contributor.authorROUZBAHANI BAYATANI, Rozita-
dc.contributor.authorJannis, Daen-
dc.contributor.authorKaur, Kawaljit-
dc.contributor.authorPOBEDINSKAS, Paulius-
dc.contributor.authorKRISHNAMURTHY, Giridharan-
dc.contributor.authorHafez, Aly Mohamed Elsayed-
dc.contributor.authorThiel, Felix-
dc.contributor.authorBornemann, Rainer-
dc.contributor.authorEngelhard, Carsten-
dc.contributor.authorSchoenherr, Holger-
dc.contributor.authorJiang , Xin-
dc.contributor.authorHAENEN, Ken-
dc.contributor.authorVERBEECK , Johan-
dc.contributor.authorYANG, Nianjun-
dc.date.accessioned2024-07-09T05:57:38Z-
dc.date.available2024-07-09T05:57:38Z-
dc.date.issued2024-
dc.date.submitted2024-07-09T05:39:29Z-
dc.identifier.citationSmall Methods, (Art N° 2301774)-
dc.identifier.urihttp://hdl.handle.net/1942/43345-
dc.description.abstractDiamond electrochemistry is primarily influenced by quantities of sp3-carbon, surface terminations, and crystalline structure. In this work, a new dimension is introduced by investigating the effect of using substrate-interlayers for diamond growth. Boron and nitrogen co-doped nanocrystalline diamond (BND; D) films are grown on Si substrate without and with Ti and Ta as interlayers, named BNDD/Si, BNDD/Ti/Si, and BNDD/Ta/Ti/Si, respectively. After detailed characterization using microscopies, spectroscopies, electrochemical techniques, and density functional theory simulations, the relationship of composition, interfacial structure, charge transport, and electrochemical properties of the interface between diamond and metal is investigated. The BNDD/Ta/Ti/Si electrodes exhibit faster electron transfer processes than the other two diamond electrodes. The interlayer thus determines the intrinsic activity and reaction kinetics. The reduction in their barrier widths can be attributed to the formation of TaC, which facilitates carrier tunneling, and simultaneously increases the concentration of electrically active defects. As a case study, the BNDD/Ta/Ti/Si electrode is further employed to assemble a redox-electrolyte-based supercapacitor device with enhanced performance. In summary, the study not only sheds light on the intricate relationship between interlayer composition, charge transfer, and electrochemical performance but also demonstrates the potential of tailored interlayer design to unlock new capabilities in diamond-based electrochemical devices. Diamond electrochemistry is revealed to be affected by the interlayers between boron/nitrogen co-doped nanocrystalline diamond (BNDD) film and a Si substrate. A BNDD/Ta/Ti/Si electrode exhibits faster electron transfer processes and smaller electron transfer resistance of redox probes for [Fe(CN)6]3-/4- and [Ru(NH3)6]3+/2+ than the other electrodes, because the interlayer thus determines the intrinsic activity and reaction kinetics of diamond films. image-
dc.description.sponsorshipX.C. acknowledges the financial support from the China Scholarship Council (No. 202008420219). X.D. thanks the China Scholarship Council (CSC) for the financial support (No. 202106250006). This work was partially funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) – project number 457444676. X.C. thanks the funding from the European Union Horizon 2020 research and innovation programme under grant agreement No. 823717 – ESTEEM3. X.C. also thanks Dr. Z. Zhai (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences) for their advice on the part of characterization. The authors are grateful to the Shenzhen Cloud Computing Center for allowing the use of their computing facilities for the DFT simulations. Part of this work was performed at the Micro- and Nanoanalytics Facility (MNaF), University of Siegen, Germany. K.H. acknowledges the funding of the Special Research Fund (BOF) via the Methusalem NANO network and the Research Foundation–Flanders (FWO) via project G0D4920N. Open access funding enabled and organized by Projekt DEAL.-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.rights2024 The Author(s). Small Methods published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.-
dc.subject.otherdoped diamond films-
dc.subject.otherelectrochemistry-
dc.subject.otherinterlayer-
dc.subject.otherredox probes-
dc.titleInterlayer Affected Diamond Electrochemistry-
dc.typeJournal Contribution-
local.format.pages10-
local.bibliographicCitation.jcatA1-
dc.description.notesChen, XY (corresponding author), Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany.; Yang, NJ (corresponding author), Hasselt Univ, Inst Mat Res Microelect IMOMEC, Dept Chem, IMEC Vzw, B-3590 Diepenbeek, Belgium.-
dc.description.notesxinyue.chen@uni-siegen.de; nianjun.yang@uhasselt.be-
local.publisher.placePOSTFACH 101161, 69451 WEINHEIM, GERMANY-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.statusEarly view-
local.bibliographicCitation.artnr2301774-
local.type.programmeH2020-
local.relation.h2020823717-
dc.identifier.doi10.1002/smtd.202301774-
dc.identifier.pmid38874124-
dc.identifier.isi001247280600001-
dc.contributor.orcidEngelhard, Carsten/0000-0002-7020-9278-
local.provider.typewosris-
local.description.affiliation[Chen, Xinyue; Dong, Ximan; Zhang, Chuyan; Zhu, Meng; Jiang, Xin] Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany.-
local.description.affiliation[Ahmed, Essraa; Krishnamurthy, Giridharan; Rouzbahani, Rozita; Pobedinskas, Paulius; Haenen, Ken] Hasselt Univ, Inst Mat Res IMO, Inst Mat Res Microelect IMOMEC, IMEC Vzw, B-3590 Diepenbeek, Belgium.-
local.description.affiliation[Gauquelin, Nicolas; Jannis, Daen; Verbeeck, Johan] Univ Antwerp, Electron Microscopy Mat Res EMAT, B-2020 Antwerp, Belgium.-
local.description.affiliation[Kaur, Kawaljit; Schoenherr, Holger] Univ Siegen, Dept Chem & Biol, Phys Chem 1, D-57075 Siegen, Germany.-
local.description.affiliation[Kaur, Kawaljit; Hafez, Aly Mohamed Elsayed; Engelhard, Carsten; Schoenherr, Holger] Univ Siegen, Dept Chem & Biol, D-57075 Siegen, Germany.-
local.description.affiliation[Kaur, Kawaljit; Hafez, Aly Mohamed Elsayed; Engelhard, Carsten; Schoenherr, Holger] Univ Siegen, Res Ctr Micro & Nanochem & Bio Technol C, D-57075 Siegen, Germany.-
local.description.affiliation[Thiel, Felix; Bornemann, Rainer] Univ Siegen, Inst High Frequency & Quantum Elect, D-57076 Siegen, Germany.-
local.description.affiliation[Yang, Nianjun] Hasselt Univ, Inst Mat Res Microelect IMOMEC, Dept Chem, IMEC Vzw, B-3590 Diepenbeek, Belgium.-
local.uhasselt.internationalyes-
item.fulltextWith Fulltext-
item.contributorChen, Xinyue-
item.contributorDong, Ximan-
item.contributorZhang , Chuyan-
item.contributorZhu, Meng-
item.contributorAHMED, Essraa-
item.contributorGauquelin, Nicolas-
item.contributorROUZBAHANI BAYATANI, Rozita-
item.contributorJannis, Daen-
item.contributorKaur, Kawaljit-
item.contributorPOBEDINSKAS, Paulius-
item.contributorKRISHNAMURTHY, Giridharan-
item.contributorHafez, Aly Mohamed Elsayed-
item.contributorThiel, Felix-
item.contributorBornemann, Rainer-
item.contributorEngelhard, Carsten-
item.contributorSchoenherr, Holger-
item.contributorJiang , Xin-
item.contributorHAENEN, Ken-
item.contributorVERBEECK , Johan-
item.contributorYANG, Nianjun-
item.fullcitationChen, Xinyue; Dong, Ximan; Zhang , Chuyan; Zhu, Meng; AHMED, Essraa; Gauquelin, Nicolas; ROUZBAHANI BAYATANI, Rozita; Jannis, Daen; Kaur, Kawaljit; POBEDINSKAS, Paulius; KRISHNAMURTHY, Giridharan; Hafez, Aly Mohamed Elsayed; Thiel, Felix; Bornemann, Rainer; Engelhard, Carsten; Schoenherr, Holger; Jiang , Xin; HAENEN, Ken; VERBEECK , Johan & YANG, Nianjun (2024) Interlayer Affected Diamond Electrochemistry. In: Small Methods, (Art N° 2301774).-
item.accessRightsOpen Access-
crisitem.journal.issn2366-9608-
crisitem.journal.eissn2366-9608-
Appears in Collections:Research publications
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