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Title: | Interlayer Affected Diamond Electrochemistry | Authors: | Chen, Xinyue Dong, Ximan Zhang , Chuyan Zhu, Meng AHMED, Essraa Gauquelin, Nicolas ROUZBAHANI BAYATANI, Rozita Jannis, Daen Kaur, Kawaljit POBEDINSKAS, Paulius KRISHNAMURTHY, Giridharan Hafez, Aly Mohamed Elsayed Thiel, Felix Bornemann, Rainer Engelhard, Carsten Schoenherr, Holger Jiang , Xin HAENEN, Ken VERBEECK , Johan YANG, Nianjun |
Issue Date: | 2024 | Publisher: | WILEY-V C H VERLAG GMBH | Source: | Small Methods, (Art N° 2301774) | Status: | Early view | Abstract: | Diamond electrochemistry is primarily influenced by quantities of sp3-carbon, surface terminations, and crystalline structure. In this work, a new dimension is introduced by investigating the effect of using substrate-interlayers for diamond growth. Boron and nitrogen co-doped nanocrystalline diamond (BND; D) films are grown on Si substrate without and with Ti and Ta as interlayers, named BNDD/Si, BNDD/Ti/Si, and BNDD/Ta/Ti/Si, respectively. After detailed characterization using microscopies, spectroscopies, electrochemical techniques, and density functional theory simulations, the relationship of composition, interfacial structure, charge transport, and electrochemical properties of the interface between diamond and metal is investigated. The BNDD/Ta/Ti/Si electrodes exhibit faster electron transfer processes than the other two diamond electrodes. The interlayer thus determines the intrinsic activity and reaction kinetics. The reduction in their barrier widths can be attributed to the formation of TaC, which facilitates carrier tunneling, and simultaneously increases the concentration of electrically active defects. As a case study, the BNDD/Ta/Ti/Si electrode is further employed to assemble a redox-electrolyte-based supercapacitor device with enhanced performance. In summary, the study not only sheds light on the intricate relationship between interlayer composition, charge transfer, and electrochemical performance but also demonstrates the potential of tailored interlayer design to unlock new capabilities in diamond-based electrochemical devices. Diamond electrochemistry is revealed to be affected by the interlayers between boron/nitrogen co-doped nanocrystalline diamond (BNDD) film and a Si substrate. A BNDD/Ta/Ti/Si electrode exhibits faster electron transfer processes and smaller electron transfer resistance of redox probes for [Fe(CN)6]3-/4- and [Ru(NH3)6]3+/2+ than the other electrodes, because the interlayer thus determines the intrinsic activity and reaction kinetics of diamond films. image | Notes: | Chen, XY (corresponding author), Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany.; Yang, NJ (corresponding author), Hasselt Univ, Inst Mat Res Microelect IMOMEC, Dept Chem, IMEC Vzw, B-3590 Diepenbeek, Belgium. xinyue.chen@uni-siegen.de; nianjun.yang@uhasselt.be |
Keywords: | doped diamond films;electrochemistry;interlayer;redox probes | Document URI: | http://hdl.handle.net/1942/43345 | ISSN: | 2366-9608 | e-ISSN: | 2366-9608 | DOI: | 10.1002/smtd.202301774 | ISI #: | 001247280600001 | Rights: | 2024 The Author(s). Small Methods published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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Small Methods - 2024 - Chen - Interlayer Affected Diamond Electrochemistry.pdf | Early view | 3.52 MB | Adobe PDF | View/Open |
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