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Title: | Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells | Authors: | ZARGAR, Fatemeh DESTA, Derese MERTENS, Sigurd VAN LANDEGHEM, Melissa HAMTAEI, Sarallah PROOTH, Jeroen Zillner, Julia Hajhemati, Javid SAFARI, Momo HARDY, An Schulz, Philip Ahlswede, Erik VERMANG, Bart VANDEWAL, Koen BOYEN, Hans-Gerd |
Issue Date: | 2024 | Publisher: | AMER CHEMICAL SOC | Source: | ACS Applied Energy Materials, 7 (9) , p. 3618 -3626 | Abstract: | Tin-based perovskite solar cells (PSCs) are emerging as a more environmentally friendly alternative to traditional PSCs that typically contain toxic lead. In this work, we study the influence of the Sn-perovskite/fullerene interface on the open-circuit voltage (V oc). When the fullerene derivative ICBA is used as the electron transport layer, the V oc reaches 0.68 V, while the band gap of the Sn-perovskite is 1.44 eV, giving a voltage deficit of 0.76 V. Using PCBM as the electron transport layer, this deficit is 0.19 V higher. Herein, we identify through Fourier transform photocurrent spectroscopy and luminescence measurements that interfacial charge-transfer states at the Sn-perovskite/fullerene interface induce a nonradiative recombination channel. The energy of these states should be increased in order to mitigate voltage losses at the contacts. | Keywords: | Sn-based perovskite solar cells;PEAX additive;photovoltage loss;Fourier transform photocurrent spectroscopy;photoluminescence quantum yield;electroluminescenceexternal quantum yield | Document URI: | http://hdl.handle.net/1942/45844 | ISSN: | 2574-0962 | DOI: | https://doi.org/10.1021/acsaem.3c03086 | ISI #: | 001226378900001 | Rights: | 2024 American Chemical Society | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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