Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/45844
Title: Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells
Authors: ZARGAR, Fatemeh 
DESTA, Derese 
MERTENS, Sigurd 
VAN LANDEGHEM, Melissa 
HAMTAEI, Sarallah 
PROOTH, Jeroen 
Zillner, Julia
Hajhemati, Javid
SAFARI, Momo 
HARDY, An 
Schulz, Philip
Ahlswede, Erik
VERMANG, Bart 
VANDEWAL, Koen 
BOYEN, Hans-Gerd 
Issue Date: 2024
Publisher: AMER CHEMICAL SOC
Source: ACS Applied Energy Materials, 7 (9) , p. 3618 -3626
Abstract: Tin-based perovskite solar cells (PSCs) are emerging as a more environmentally friendly alternative to traditional PSCs that typically contain toxic lead. In this work, we study the influence of the Sn-perovskite/fullerene interface on the open-circuit voltage (V oc). When the fullerene derivative ICBA is used as the electron transport layer, the V oc reaches 0.68 V, while the band gap of the Sn-perovskite is 1.44 eV, giving a voltage deficit of 0.76 V. Using PCBM as the electron transport layer, this deficit is 0.19 V higher. Herein, we identify through Fourier transform photocurrent spectroscopy and luminescence measurements that interfacial charge-transfer states at the Sn-perovskite/fullerene interface induce a nonradiative recombination channel. The energy of these states should be increased in order to mitigate voltage losses at the contacts.
Keywords: Sn-based perovskite solar cells;PEAX additive;photovoltage loss;Fourier transform photocurrent spectroscopy;photoluminescence quantum yield;electroluminescenceexternal quantum yield
Document URI: http://hdl.handle.net/1942/45844
ISSN: 2574-0962
DOI: https://doi.org/10.1021/acsaem.3c03086
ISI #: 001226378900001
Rights: 2024 American Chemical Society
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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