Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/49207
Title: Fully Textured Monolithic Sb2S3/Silicon Tandem for Unbiased and Stable Solar-Driven Water Splitting Paired with Iodide Oxidation Reaction
Authors: Min, Jihong
DEI TOS, Irene 
Rahimisheikh, Sepideh
de la Fuente, Beatriz
RAJAGOPAL, Devika 
D'HAEN, Jan 
Cornil, David
Hauffman, Tom
Beljonne, David
AERNOUTS, Tom 
Hadermann, Joke
Shin, Byungha
VERMANG, Bart 
SHUKLA, Sudhanshu 
Issue Date: 2026
Publisher: WILEY-V C H VERLAG GMBH
Source: Advanced science,
Status: Early view
Abstract: Solar-driven photoelectrochemical (PEC) production of chemical fuels such as hydrogen is a viable solution to address climate neutrality objectives. Development of a monolithic tandem PEC device consisting of ideal bandgap absorbers is of paramount importance to realize efficient artificial photosynthesis systems. Herein, we report monolithic integration of Sb2S3 on textured silicon to realize a completely inorganic and fully vacuum processed multilayer PEC device with Ag/Indium Tin Oxide (ITO)/Heterojunction with Intrinsic Thin layer (HIT) Si/ITO/Au/Sb2S3/NiOx architecture. Photoelectron spectroscopy and computational analysis show a staggered band alignment between Si and Sb2S3, emulating Z-scheme charge transfer mechanism. We demonstrate a high performing and stable Sb2S3-Si monolithic tandem for PEC hydrogen evolution reaction (HER) coupled to iodide oxidation reaction (IOR). Under AM 1.5G illumination, the Sb2S3-Si monolithic tandem device achieves unassisted photocurrent density of 4.38 mA cm- 2 with faradaic efficiency of 97% for hydrogen, while maintaining similar to 90% of its initial performance after 10 h of continuous operation. These results set a new benchmark for all inorganic monolithic tandems for efficient and sustainable solar-to-chemical conversion. This work unlocks the pathway for artificial photosynthesis systems comprising ideal bandgap photo absorbers.
Notes: Shin, B (corresponding author), Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon, South Korea.; Shukla, S (corresponding author), IUMAT, imec, Genk, Belgium.; Shukla, S (corresponding author), UHasselt, Inst Mat Res IUMAT, Hasselt, Belgium.; Shukla, S (corresponding author), EnergyVille, Genk, Belgium.
byungha@kaist.ac.kr; sudhanshu.shukla@imec.be
Document URI: http://hdl.handle.net/1942/49207
e-ISSN: 2198-3844
DOI: 10.1002/advs.75798
ISI #: 001771716100001
Rights: 2026 The Author(s). Advanced Science published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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