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http://hdl.handle.net/1942/5748
Title: | Stress relaxation in Al(Cu) thin films | Authors: | Proost, J. Witvrouw, A. COSEMANS, Patrick Peter Roussel, Ph. Maex, Karen |
Issue Date: | 1997 | Publisher: | Elsevier Science B.V. | Source: | Microelectronic engineering, 33(1-4). p. 137-147 | Abstract: | Substrate curvature measurements were used to study both the stress changes during thermal cycling and the kinetics of tensile stress relaxation in 800 nm Al (0.5wt% Cu)-films on oxidized Si-substrates. Qualitative microstructural evidence is provided for the observed decrease in room-temperature stress after the first and subsequent thermal cycles. Isothermal relaxation measurements at temperatures up to 100°C could be described well by dislocation glide with an activation energy of 3.0±0.3 eV and an average athermal flow stress of 600±200 MPa. Evidence for an Orowan-strengthening mechanism is provided by TEM-investigation. | Document URI: | http://hdl.handle.net/1942/5748 | DOI: | 10.1016/S0167-9317(96)00039-1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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