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|Title:||Stress relaxation in Al(Cu) thin films||Authors:||Proost, J.
COSEMANS, Patrick Peter
|Issue Date:||1997||Publisher:||Elsevier Science B.V.||Source:||Microelectronic engineering, 33(1-4). p. 137-147||Abstract:||Substrate curvature measurements were used to study both the stress changes during thermal cycling and the kinetics of tensile stress relaxation in 800 nm Al (0.5wt% Cu)-films on oxidized Si-substrates. Qualitative microstructural evidence is provided for the observed decrease in room-temperature stress after the first and subsequent thermal cycles. Isothermal relaxation measurements at temperatures up to 100°C could be described well by dislocation glide with an activation energy of 3.0±0.3 eV and an average athermal flow stress of 600±200 MPa. Evidence for an Orowan-strengthening mechanism is provided by TEM-investigation.||Document URI:||http://hdl.handle.net/1942/5748||DOI:||10.1016/S0167-9317(96)00039-1||Type:||Journal Contribution|
|Appears in Collections:||Research publications|
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