Please use this identifier to cite or link to this item:
Title: Stress relaxation in Al(Cu) thin films
Authors: Proost, J.
Witvrouw, A.
COSEMANS, Patrick Peter 
Roussel, Ph.
Maex, Karen
Issue Date: 1997
Publisher: Elsevier Science B.V.
Source: Microelectronic engineering, 33(1-4). p. 137-147
Abstract: Substrate curvature measurements were used to study both the stress changes during thermal cycling and the kinetics of tensile stress relaxation in 800 nm Al (0.5wt% Cu)-films on oxidized Si-substrates. Qualitative microstructural evidence is provided for the observed decrease in room-temperature stress after the first and subsequent thermal cycles. Isothermal relaxation measurements at temperatures up to 100°C could be described well by dislocation glide with an activation energy of 3.0±0.3 eV and an average athermal flow stress of 600±200 MPa. Evidence for an Orowan-strengthening mechanism is provided by TEM-investigation.
Document URI:
DOI: 10.1016/S0167-9317(96)00039-1
Type: Journal Contribution
Appears in Collections:Research publications

Show full item record

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.