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http://hdl.handle.net/1942/6172
Title: | Effect of the diamond nucleation process on freestanding AIN/diamond SAW filter characteristics | Authors: | Elmazria, O. Elhakiki, M. MORTET, Vincent Assouar, Mohamed B. Bouvot, L. NESLADEK, Milos Vanecek, M. Bergonzo, P. D'OLIESLAEGER, Marc Alnot, P. |
Issue Date: | 2003 | Publisher: | IEEE | Source: | Yuhas, DE & Schneider, SC (Ed.) 2003 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS: vol. 1-2. p. 1746-1749. | Series/Report: | ULTRASONICS SYMPOSIUM | Abstract: | In this work, the effect of diamond nucleation process on freestanding AIN/diamond SAW device performances were studied. Before diamond deposition, silicon substrates were mechanically nucleated, using an ultrasonic vibration table with sub-micron diamond slurry, and bias enhanced nucleated (BEN). Freestanding diamond layers obtained on mechanically scratched Si substrates exhibit a surface roughness of R-MS=13nm whereas very low surface roughness (as low as R(MS)less than or equal to1 nm) can be achieved on BEN diamond layer. Propagation losses (a) and electromechanical coupling coefficient (K-2) have been measured as a function of the operating frequency and the normalized AN film thickness (kh(AlN)=21pih(AIN)/lambda). Experimental results show that the propagation losses strongly depend on nucleation technique while the electromechanical coupling coefficient slightly depends on nucleation technique. | Document URI: | http://hdl.handle.net/1942/6172 | ISBN: | 0-7803-7922-5 | ISI #: | 000189492100404 | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
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