Highly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6194

Title:	Highly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode
Authors:	van Dorpe, P. Motsnyi, V.F. Nijboer, M. Goovaerts, E. Safarov, V.I. Das, J van Roy, W. Borghs, G. DE BOECK, Joan
Issue Date:	2003
Publisher:	INST PURE APPLIED PHYSICS
Source:	Japanese journal of applied physics, 42(5B). p. L502-L504
Abstract:	We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations. of at least 24% at 80 K and 12% at room temperature.
Keywords:	spin injection, spintronics, room temperature, tunnel barrier
Document URI:	http://hdl.handle.net/1942/6194
ISSN:	0021-4922
e-ISSN:	1347-4065
DOI:	10.1143/JJAP.42.L502
ISI #:	000183745300003
Category:	A1
Type:	Journal Contribution
Appears in Collections:	Research publications

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