Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/6194
Title: | Highly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode | Authors: | van Dorpe, P. Motsnyi, V.F. Nijboer, M. Goovaerts, E. Safarov, V.I. Das, J van Roy, W. Borghs, G. DE BOECK, Joan |
Issue Date: | 2003 | Publisher: | INST PURE APPLIED PHYSICS | Source: | Japanese journal of applied physics, 42(5B). p. L502-L504 | Abstract: | We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations. of at least 24% at 80 K and 12% at room temperature. | Keywords: | spin injection, spintronics, room temperature, tunnel barrier | Document URI: | http://hdl.handle.net/1942/6194 | ISSN: | 0021-4922 | e-ISSN: | 1347-4065 | DOI: | 10.1143/JJAP.42.L502 | ISI #: | 000183745300003 | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
Show full item record
SCOPUSTM
Citations
35
checked on Sep 2, 2020
WEB OF SCIENCETM
Citations
33
checked on Oct 14, 2024
Page view(s)
100
checked on Jul 9, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.