Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6683
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dc.contributor.authorTian, C.-
dc.contributor.authorGomez, J.-
dc.contributor.authorBeyer, G.P.-
dc.contributor.authorde Bisschop, P.-
dc.contributor.authorVandervorst, W.-
dc.contributor.authorWU, Ting-Di-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.date.accessioned2007-12-20T16:09:44Z-
dc.date.available2007-12-20T16:09:44Z-
dc.date.issued1998-
dc.identifier.citationProceedings of the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS 11, Orlando, Fla, 7-12 September 1997). p. 351-354.-
dc.identifier.urihttp://hdl.handle.net/1942/6683-
dc.publisherChichester Wiley 1998-
dc.titleTowards an understanding of ion beam mixing by quantitative internal profiling: Cu in Si-
dc.typeProceedings Paper-
dc.identifier.epage354-
dc.identifier.spage351-
local.type.specifiedProceedings Paper-
dc.bibliographicCitation.oldjcat-
local.bibliographicCitation.btitleProceedings of the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS 11, Orlando, Fla, 7-12 September 1997)-
item.fulltextNo Fulltext-
item.fullcitationTian, C.; Gomez, J.; Beyer, G.P.; de Bisschop, P.; Vandervorst, W.; WU, Ting-Di & D'OLIESLAEGER, Marc (1998) Towards an understanding of ion beam mixing by quantitative internal profiling: Cu in Si. In: Proceedings of the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS 11, Orlando, Fla, 7-12 September 1997). p. 351-354..-
item.contributorTian, C.-
item.contributorGomez, J.-
item.contributorBeyer, G.P.-
item.contributorde Bisschop, P.-
item.contributorVandervorst, W.-
item.contributorWU, Ting-Di-
item.contributorD'OLIESLAEGER, Marc-
item.accessRightsClosed Access-
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