Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/7814
Full metadata record
DC FieldValueLanguage
dc.contributor.authorMOONEN, Rob-
dc.contributor.authorVanmeerbeek, P-
dc.contributor.authorLEKENS, Geert-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorMoens, P.-
dc.contributor.authorBOUTSEN, Jan-
dc.date.accessioned2008-02-04T16:29:23Z-
dc.date.available2008-02-04T16:29:23Z-
dc.date.issued2007-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 47(9-11). p. 1389-1393-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/7814-
dc.description.abstractHigh resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3-13.2 MV/cm at high temperatures (160-240 degrees C). It is proven that even at these high temperatures log(t(BD)) is proportional to 1/E-OX and the time-to-breakdown mechanism matches the anode hole injection (AHI) model (1/E-OX model). In addition it is presented that the TDDB activation energy Ea for this type of gate oxide has linear dependence on stress electric oxide field. (C) 2007 Elsevier Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleLifetime modeling of intrinsic gate oxide breakdown at high temperature-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateArcachon, FRANCE-
local.bibliographicCitation.conferencename18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis-
dc.identifier.epage1393-
dc.identifier.issue9-11-
dc.identifier.spage1389-
dc.identifier.volume47-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notesHasselt Univ, Mat Res Inst, Diepenbeek, B-3590 Belgium. AMI Semiconduct Belgium BVBA, Oudenaarde, B-9700 Belgium. IMEC vzw, Div IMOMEC, Diepenbeek, B-3590 Belgium. XIOS Hogesch Limburg, Diepenbeek, B-3590 Belgium.Moonen, R, Hasselt Univ, Mat Res Inst, Wetenschapspk 1, Diepenbeek, B-3590 Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.microrel.2007.07.039-
dc.identifier.isi000250604600015-
item.accessRightsClosed Access-
item.validationecoom 2008-
item.fulltextNo Fulltext-
item.fullcitationMOONEN, Rob; Vanmeerbeek, P; LEKENS, Geert; DE CEUNINCK, Ward; Moens, P. & BOUTSEN, Jan (2007) Lifetime modeling of intrinsic gate oxide breakdown at high temperature. In: MICROELECTRONICS RELIABILITY, 47(9-11). p. 1389-1393.-
item.contributorMOONEN, Rob-
item.contributorVanmeerbeek, P-
item.contributorLEKENS, Geert-
item.contributorDE CEUNINCK, Ward-
item.contributorMoens, P.-
item.contributorBOUTSEN, Jan-
crisitem.journal.issn0026-2714-
crisitem.journal.eissn1872-941X-
Appears in Collections:Research publications
Show simple item record

SCOPUSTM   
Citations

6
checked on Sep 2, 2020

WEB OF SCIENCETM
Citations

4
checked on Apr 22, 2024

Page view(s)

104
checked on Jul 9, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.