Lifetime modeling of intrinsic gate oxide breakdown at high temperature

Abstract

High resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3-13.2 MV/cm at high temperatures (160-240 degrees C). It is proven that even at these high temperatures log(t(BD)) is proportional to 1/E-OX and the time-to-breakdown mechanism matches the anode hole injection (AHI) model (1/E-OX model). In addition it is presented that the TDDB activation energy Ea for this type of gate oxide has linear dependence on stress electric oxide field. (C) 2007 Elsevier Ltd. All rights reserved.