Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8233
Title: Growth of polycrystalline phosphorous-doped CVD diamond layers
Authors: Lazea, A
MORTET, Vincent 
D'HAEN, Jan 
Geithner, P.
Ristein, J.
D'OLIESLAEGER, Marc 
HAENEN, Ken 
Issue Date: 2008
Publisher: ELSEVIER SCIENCE BV
Source: CHEMICAL PHYSICS LETTERS, 454(4-6). p. 310-313
Abstract: Microwave plasma-enhanced chemical vapour deposition (MW PE CVD) growth conditions for preparation of polycrystalline phosphorous-doped diamond layers are presented. The incorporation of substitutional phosphorous was confirmed by low temperature photocurrent (PC) and cathodoluminescence (CL) measurements. The topographical characteristics of thefilms and the relation between the substrate and P-dopedfilm grain orientation were studied by scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The growth process for P-doped layers on (110) oriented polycrystalline diamond was optimised and the best set of parameters differs significantly from the standard conditions used for P-doping of single crystalline (111) oriented diamond surfaces. (c) 2008 Elsevier B.V. All rights reserved.
Notes: Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. Univ Erlangen Nurnberg, Erlangen, Germany.Haenen, K, Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.ken.haenen@uhasselt.be
Document URI: http://hdl.handle.net/1942/8233
ISSN: 0009-2614
e-ISSN: 1873-4448
DOI: 10.1016/j.cplett.2008.02.030
ISI #: 000254425200032
Category: A1
Type: Journal Contribution
Validations: ecoom 2009
Appears in Collections:Research publications

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