Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8539
Title: Charge transport in high mobility single crystal diamond
Authors: Nesladek, Milos 
BOGDAN, Anna 
Deferme, Wim 
Tranchant, Nicolas
Bergonzo, Philippe
Issue Date: 2008
Publisher: ELSEVIER SCIENCE SA
Source: DIAMOND AND RELATED MATERIALS, 17(7-10). p. 1235-1240
Abstract: Time of Flight (TOF) measurements using conventional laser TOF and a-particle TOF setups have been carried out on high quality CVD diamond samples to study the electron and drift mobility and to compare them with the mobility data for IIA diamond. The measured mobilities for all samples investigated are in the range 20002250 cm(2)/Vs for holes and 2200-2750 cm(2)/VS for electrons, thus close to the theoretical prediction as well as to IIa diamond mobility values. The charge transient profile measured in the laser TOF measurements is influenced by the electric field profile in the sample, which might be changed based on the charge trapping at low electric fields applied, depending on the surface atomic termination. The temperature dependence of the drift mobility indicates that at room temperature the scattering on acoustic phonons is the main dominant scattering mechanism and the contribution of other types of carrier scattering mechanism is negligible. (C) 2008 Elsevier B.V. All rights reserved.
Notes: [Nesladek, Milos; Bogdan, Anna; Deferme, Wim] Univ Hasselt, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Nesladek, Milos; Tranchant, Nicolas; Bergonzo, Philippe] CEA Saclay, CEA LIST, Diamond Sensor Lab, F-91191 Gif Sur Yvette, France.
Keywords: single crystal CVD diamond; electrical transport properties; electrical charge mobility; defects
Document URI: http://hdl.handle.net/1942/8539
ISSN: 0925-9635
e-ISSN: 1879-0062
DOI: 10.1016/j.diamond.2008.03.015
ISI #: 000259598300039
Category: A1
Type: Journal Contribution
Validations: ecoom 2009
Appears in Collections:Research publications

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