Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8544
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dc.contributor.authorMORTET, Vincent-
dc.contributor.authorDAENEN, Michael-
dc.contributor.authorTeraji, T.-
dc.contributor.authorLAZEA, Andrada-
dc.contributor.authorVorlicek, V.-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorHAENEN, Ken-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.date.accessioned2008-10-31T10:43:26Z-
dc.date.available2008-10-31T10:43:26Z-
dc.date.issued2008-
dc.identifier.citationDIAMOND AND RELATED MATERIALS, 17(7-10). p. 1330-1334-
dc.identifier.issn0925-9635-
dc.identifier.urihttp://hdl.handle.net/1942/8544-
dc.description.abstractBoron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The boron doped layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases. (C) 2008 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.subject.otherCVD diamond; homoepitaxy; p-type doping; electrical properties; optical properties-
dc.titleCharacterization of boron doped diamond epilayers grown in a NIRIM type reactor-
dc.typeJournal Contribution-
dc.identifier.epage1334-
dc.identifier.issue7-10-
dc.identifier.spage1330-
dc.identifier.volume17-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[Mortet, V.; Daenen, M.; Lazea, A.; D'Haen, J.; Haenen, K.; D'Olieslaeger, M.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Mortet, V.; Lazea, A.; D'Haen, J.; Haenen, K.; D'Olieslaeger, M.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Teraji, T.] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan. [Vorlicek, V.] Acad Sci Czech Republic, Inst Phys, CZ-18221 Prague 8, Czech Republic.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.diamond.2008.01.087-
dc.identifier.isi000259598300059-
item.fullcitationMORTET, Vincent; DAENEN, Michael; Teraji, T.; LAZEA, Andrada; Vorlicek, V.; D'HAEN, Jan; HAENEN, Ken & D'OLIESLAEGER, Marc (2008) Characterization of boron doped diamond epilayers grown in a NIRIM type reactor. In: DIAMOND AND RELATED MATERIALS, 17(7-10). p. 1330-1334.-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
item.validationecoom 2009-
item.contributorTeraji, T.-
item.contributorMORTET, Vincent-
item.contributorHAENEN, Ken-
item.contributorDAENEN, Michael-
item.contributorD'OLIESLAEGER, Marc-
item.contributorVorlicek, V.-
item.contributorLAZEA, Andrada-
item.contributorD'HAEN, Jan-
crisitem.journal.issn0925-9635-
crisitem.journal.eissn1879-0062-
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