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http://hdl.handle.net/1942/8544| Title: | Characterization of boron doped diamond epilayers grown in a NIRIM type reactor | Authors: | MORTET, Vincent DAENEN, Michael Teraji, T. LAZEA, Andrada Vorlicek, V. D'HAEN, Jan HAENEN, Ken D'OLIESLAEGER, Marc |
Issue Date: | 2008 | Publisher: | ELSEVIER SCIENCE SA | Source: | DIAMOND AND RELATED MATERIALS, 17(7-10). p. 1330-1334 | Abstract: | Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The boron doped layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases. (C) 2008 Elsevier B.V. All rights reserved. | Notes: | [Mortet, V.; Daenen, M.; Lazea, A.; D'Haen, J.; Haenen, K.; D'Olieslaeger, M.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Mortet, V.; Lazea, A.; D'Haen, J.; Haenen, K.; D'Olieslaeger, M.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Teraji, T.] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan. [Vorlicek, V.] Acad Sci Czech Republic, Inst Phys, CZ-18221 Prague 8, Czech Republic. | Keywords: | CVD diamond; homoepitaxy; p-type doping; electrical properties; optical properties | Document URI: | http://hdl.handle.net/1942/8544 | ISSN: | 0925-9635 | e-ISSN: | 1879-0062 | DOI: | 10.1016/j.diamond.2008.01.087 | ISI #: | 000259598300059 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2009 |
| Appears in Collections: | Research publications |
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