Diamond nanoseeding on silicon: Stability under H-2 MPCVD exposures and early stages of growth

Abstract

Detonation nanodiamond dispersed on silicon surfaces underwent different H-2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H-2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp(3) etching rate is insufficient to remove nanodiamond even under intense H-2 plasma. The H-2 exposure could be successfully used to remove C-C sp(2) carbon without altering sp(3) seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate. (C) 2008 Elsevier B.V. All rights reserved.