Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8755
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dc.contributor.advisorDE SCHEPPER, Luc-
dc.contributor.authorDREESEN, Raf-
dc.date.accessioned2008-12-03T19:16:12Z-
dc.date.available2008-12-03T19:16:12Z-
dc.date.issued2000-
dc.identifier.urihttp://hdl.handle.net/1942/8755-
dc.description.abstractThis thesis deals with the study of the reliability of one specific type of electronic component, the Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). MOSFETs have been in use since the beginning of the sixties. They have several advantages: The LOCOS (Local Oxidation of Silicon) isolation enables the separation of devices. The structure has superb scaling possibilities . The use of n-type and p-type devices on the same substrate allows building circuits with complementary MOS structures (CMOS), which results in ultra-low power consumption. These advantages have made the MOSFET the basic building block of semiconductor very-large-scale integration (VLSI) and ultra-large-scale integration (ULSI) products, such as memory cells and microprocessors. ...-
dc.language.isoen-
dc.publisherUHasselt Diepenbeek-
dc.titleModelling of the Hot-Carrier Degradation Behaviour of Submicron nMOSFETs making use of High-Resolution Measurements-
dc.typeTheses and Dissertations-
local.bibliographicCitation.jcatT1-
local.type.specifiedPhd thesis-
dc.bibliographicCitation.oldjcatD1-
item.accessRightsOpen Access-
item.fullcitationDREESEN, Raf (2000) Modelling of the Hot-Carrier Degradation Behaviour of Submicron nMOSFETs making use of High-Resolution Measurements.-
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