Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/8755
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | DE SCHEPPER, Luc | - |
dc.contributor.author | DREESEN, Raf | - |
dc.date.accessioned | 2008-12-03T19:16:12Z | - |
dc.date.available | 2008-12-03T19:16:12Z | - |
dc.date.issued | 2000 | - |
dc.identifier.uri | http://hdl.handle.net/1942/8755 | - |
dc.description.abstract | This thesis deals with the study of the reliability of one specific type of electronic component, the Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). MOSFETs have been in use since the beginning of the sixties. They have several advantages: The LOCOS (Local Oxidation of Silicon) isolation enables the separation of devices. The structure has superb scaling possibilities . The use of n-type and p-type devices on the same substrate allows building circuits with complementary MOS structures (CMOS), which results in ultra-low power consumption. These advantages have made the MOSFET the basic building block of semiconductor very-large-scale integration (VLSI) and ultra-large-scale integration (ULSI) products, such as memory cells and microprocessors. ... | - |
dc.language.iso | en | - |
dc.publisher | UHasselt Diepenbeek | - |
dc.title | Modelling of the Hot-Carrier Degradation Behaviour of Submicron nMOSFETs making use of High-Resolution Measurements | - |
dc.type | Theses and Dissertations | - |
local.bibliographicCitation.jcat | T1 | - |
local.type.specified | Phd thesis | - |
dc.bibliographicCitation.oldjcat | D1 | - |
item.fulltext | With Fulltext | - |
item.fullcitation | DREESEN, Raf (2000) Modelling of the Hot-Carrier Degradation Behaviour of Submicron nMOSFETs making use of High-Resolution Measurements. | - |
item.contributor | DREESEN, Raf | - |
item.accessRights | Open Access | - |
Appears in Collections: | PhD theses Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Raf Dreesen.pdf | 14.77 MB | Adobe PDF | View/Open |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.