Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/913
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dc.contributor.authorARESU, Stefano-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDegraeve, R.-
dc.contributor.authorKaczer, B.-
dc.contributor.authorKNUYT, Gilbert-
dc.contributor.authorDE SCHEPPER, Luc-
dc.date.accessioned2006-03-13T10:42:18Z-
dc.date.available2006-03-13T10:42:18Z-
dc.date.issued2005-
dc.identifier.citationMicroelectronic Engineering, 80(1). p. 182-185-
dc.identifier.issn0167-9317-
dc.identifier.urihttp://hdl.handle.net/1942/913-
dc.description.abstractA model is proposed and validated for the degradation mechanisms occurring in ultra-thin SiO2 at real operation conditions, based on high-resolution, high-speed in-situ measurements. This state-of-the-art set-up proves that oxide degradation still occurs at low stress conditions and allows distinguishing quantitatively the SILC-contribution from the contribution due to trapping.-
dc.format.extent213604 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.publisherElsevier B.V.-
dc.subject.otherReliability of electronic components-
dc.titleUnderstanding Oxide Degradation Mechanisms in ultra-thin SiO2 through High-Speed, High Resolution in-situ Measurements-
dc.typeJournal Contribution-
dc.identifier.epage185-
dc.identifier.issue1-
dc.identifier.spage182-
dc.identifier.volume80-
local.bibliographicCitation.jcatA1-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.mee.2005.04.065-
dc.identifier.isi000231517000043-
item.fulltextWith Fulltext-
item.contributorARESU, Stefano-
item.contributorDE CEUNINCK, Ward-
item.contributorDegraeve, R.-
item.contributorKaczer, B.-
item.contributorKNUYT, Gilbert-
item.contributorDE SCHEPPER, Luc-
item.fullcitationARESU, Stefano; DE CEUNINCK, Ward; Degraeve, R.; Kaczer, B.; KNUYT, Gilbert & DE SCHEPPER, Luc (2005) Understanding Oxide Degradation Mechanisms in ultra-thin SiO2 through High-Speed, High Resolution in-situ Measurements. In: Microelectronic Engineering, 80(1). p. 182-185.-
item.accessRightsClosed Access-
item.validationecoom 2006-
crisitem.journal.issn0167-9317-
crisitem.journal.eissn1873-5568-
Appears in Collections:Research publications
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