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http://hdl.handle.net/1942/913
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | ARESU, Stefano | - |
dc.contributor.author | DE CEUNINCK, Ward | - |
dc.contributor.author | Degraeve, R. | - |
dc.contributor.author | Kaczer, B. | - |
dc.contributor.author | KNUYT, Gilbert | - |
dc.contributor.author | DE SCHEPPER, Luc | - |
dc.date.accessioned | 2006-03-13T10:42:18Z | - |
dc.date.available | 2006-03-13T10:42:18Z | - |
dc.date.issued | 2005 | - |
dc.identifier.citation | Microelectronic Engineering, 80(1). p. 182-185 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | http://hdl.handle.net/1942/913 | - |
dc.description.abstract | A model is proposed and validated for the degradation mechanisms occurring in ultra-thin SiO2 at real operation conditions, based on high-resolution, high-speed in-situ measurements. This state-of-the-art set-up proves that oxide degradation still occurs at low stress conditions and allows distinguishing quantitatively the SILC-contribution from the contribution due to trapping. | - |
dc.format.extent | 213604 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | en | - |
dc.publisher | Elsevier B.V. | - |
dc.subject.other | Reliability of electronic components | - |
dc.title | Understanding Oxide Degradation Mechanisms in ultra-thin SiO2 through High-Speed, High Resolution in-situ Measurements | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 185 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 182 | - |
dc.identifier.volume | 80 | - |
local.bibliographicCitation.jcat | A1 | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1016/j.mee.2005.04.065 | - |
dc.identifier.isi | 000231517000043 | - |
item.accessRights | Open Access | - |
item.validation | ecoom 2006 | - |
item.fulltext | With Fulltext | - |
item.fullcitation | ARESU, Stefano; DE CEUNINCK, Ward; Degraeve, R.; Kaczer, B.; KNUYT, Gilbert & DE SCHEPPER, Luc (2005) Understanding Oxide Degradation Mechanisms in ultra-thin SiO2 through High-Speed, High Resolution in-situ Measurements. In: Microelectronic Engineering, 80(1). p. 182-185. | - |
item.contributor | ARESU, Stefano | - |
item.contributor | DE CEUNINCK, Ward | - |
item.contributor | Degraeve, R. | - |
item.contributor | Kaczer, B. | - |
item.contributor | KNUYT, Gilbert | - |
item.contributor | DE SCHEPPER, Luc | - |
crisitem.journal.issn | 0167-9317 | - |
crisitem.journal.eissn | 1873-5568 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Aresu INFOS2005.pdf | 208.6 kB | Adobe PDF | View/Open |
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