Please use this identifier to cite or link to this item:
Title: A new method for the lifetime determination of submicron metal interconnects by means of a parallel test structure
Authors: VANSTREELS, Kris 
D'HAEN, Jan 
Maex, Karen
Issue Date: 2005
Publisher: Elsevier
Source: Microelectronics Reliability, 45(3-4). p. 753-759
Abstract: Simulation experiments on both series and parallel electromigration (EM) test structures were carried out under current (or voltage) stress and further analysed by means of the total resistance (TR) analysis and a software package “failure” in order to calculate and to compare the behaviour of both EM test structures. These simulation experiments show that the parallel EM test structure is a correct approach for the determination of the failure time of submicron interconnects, the activation energy and the current density exponent n of the thermally driven process, therefore leading to a very substantial reduction of the number of samples that are needed to perform the EM tests.
Keywords: Reliability of electronic components
Document URI:
ISSN: 0026-2714
e-ISSN: 1872-941X
DOI: 10.1016/j.microrel.2004.12.010
ISI #: 000227056000037
Category: A1
Type: Journal Contribution
Validations: ecoom 2006
Appears in Collections:Research publications

Show full item record

Page view(s)

checked on May 23, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.