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http://hdl.handle.net/1942/9836
Title: | Incorporation of phosphorus donors in (110)-textured polycrystalline diamond | Authors: | LAZEA, Andrada Barjon, Julien D'HAEN, Jan MORTET, Vincent D'OLIESLAEGER, Marc HAENEN, Ken |
Issue Date: | 2009 | Publisher: | AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA | Source: | JOURNAL OF APPLIED PHYSICS, 105(8), (ART N° 083545) | Abstract: | The incorporation efficiency of phosphorus was studied as a function of the surface orientation of grains in (110)-textured polycrystalline chemical vapor deposited diamond. Cathodoluminescence mapping of such films exhibits large local differences in relative intensities stemming from P-bound and free excitons. Combined with electron backscattering diffraction mapping, these data allow assessing of the donor concentration as a function of the grain orientation. While [P] can vary between 10(15) and >10(18) cm(-3) within one film, misorientation angles of more than 10 degrees with respect to the exact [110] axis assure an enhanced incorporation of P with concentrations surpassing 5x10(17) cm(-3). The role of the surface morphology in the observation of these large incorporation differences is explained. | Keywords: | cathodoluminescence; chemical vapour deposition; diamond; electron diffraction; elemental semiconductors; excitons; phosphorus; semiconductor doping; semiconductor thin films; surface morphology; texture; DOPED CVD DIAMOND; GROWTH; SURFACE; FILMS | Document URI: | http://hdl.handle.net/1942/9836 | ISSN: | 0021-8979 | e-ISSN: | 1089-7550 | DOI: | 10.1063/1.3116736 | ISI #: | 000268064700071 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2010 |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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JAP Lazea et al-merged.pdf | Non Peer-reviewed author version | 2.03 MB | Adobe PDF | View/Open |
1.3116736.pdf Restricted Access | Published version | 516.45 kB | Adobe PDF | View/Open Request a copy |
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