Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9836
Title: Incorporation of phosphorus donors in (110)-textured polycrystalline diamond
Authors: LAZEA, Andrada 
Barjon, Julien
D'HAEN, Jan 
MORTET, Vincent 
D'OLIESLAEGER, Marc 
HAENEN, Ken 
Issue Date: 2009
Publisher: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Source: JOURNAL OF APPLIED PHYSICS, 105(8), (ART N° 083545)
Abstract: The incorporation efficiency of phosphorus was studied as a function of the surface orientation of grains in (110)-textured polycrystalline chemical vapor deposited diamond. Cathodoluminescence mapping of such films exhibits large local differences in relative intensities stemming from P-bound and free excitons. Combined with electron backscattering diffraction mapping, these data allow assessing of the donor concentration as a function of the grain orientation. While [P] can vary between 10(15) and >10(18) cm(-3) within one film, misorientation angles of more than 10 degrees with respect to the exact [110] axis assure an enhanced incorporation of P with concentrations surpassing 5x10(17) cm(-3). The role of the surface morphology in the observation of these large incorporation differences is explained.
Keywords: cathodoluminescence; chemical vapour deposition; diamond; electron diffraction; elemental semiconductors; excitons; phosphorus; semiconductor doping; semiconductor thin films; surface morphology; texture; DOPED CVD DIAMOND; GROWTH; SURFACE; FILMS
Document URI: http://hdl.handle.net/1942/9836
ISSN: 0021-8979
e-ISSN: 1089-7550
DOI: 10.1063/1.3116736
ISI #: 000268064700071
Category: A1
Type: Journal Contribution
Validations: ecoom 2010
Appears in Collections:Research publications

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