BRAMMERTZ, Guy

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BRAMMERTZ, Guy
Email
guy.brammertz@uhasselt.be
 
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Publications

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Author:  Caymax, M.
Date Issued:  2010

Results 1-11 of 11 (Search time: 0.004 seconds).

Issue DateTitleContributor(s)TypeCat.
12010Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) SubstratesWang, G.; Nguyen, N. D.; Leys, M. R.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Proceedings PaperC1
22010Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealingChang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; BRAMMERTZ, Guy; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
32010High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmapHeyns, M.; Bellenger, F.; BRAMMERTZ, Guy; Caymax, M.; De Gendt, S.; De Jaeger, B.; Delabie, A.; Eneman, G.; Groeseneken, G.; Houssa, M.; Leonelli, D.; Lin, D.; Martens, K.; Merckling, C.; MEURIS, Marc; Mitard, J.; Penaud, J.; Pourtois, G.; Scarrozza, M.; Simoen, E.; Van Elshocht, S.; Vandenberghe, W.; Vandooren, A.; Verhulst, A.; Wang, W.-E.Proceedings PaperC1
42010Catalytic forming gas anneal on III-V/Ge MOS systemsWang, W.-E.; Lin, H.-C.; BRAMMERTZ, Guy; Delabie, A.; Sioncke, S.; Simoen, E.; Caymax, M.; MEURIS, Marc; Heyns, M.Proceedings PaperC1
52010Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic ApplicationsNguyen, N. D.; Wang, G.; BRAMMERTZ, Guy; Leys, M.; Waldron, N.; WINDERICKX, Jori; Lismont, K.; Dekoster, J.; Loo, R.; MEURIS, Marc; Degroote, S.; Buttita, F.; O'Neil, B.; Feron, O.; Lindner, J.; Schulte, F.; Schineller, B.; Heuken, M.; Caymax, M.Proceedings PaperC1
62010ALD on High Mobility Channels: Engineering the Proper Gate Stack PassivationSioncke, S.; Lin, H. C.; Adelmann, C.; BRAMMERTZ, Guy; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; MEURIS, Marc; Struyf, H.; De Gendt, S.; Heyns, M.; Fleischmann, C.; Temst, K.; Vantomme, A.; Mueller, M.; Kolbe, M.; Beckhoff, B.; Schmeisser, D.; Tallarida, M.Proceedings PaperC1
72010Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOSLin, D.; Waldron, N.; BRAMMERTZ, Guy; MARTENS, Klara; Wang, W. -E; Sioncke, S.; Delabie, A.; Bender, H.; Conard, T.; Tseng, W. H.; Lin, J. C.; Temst, K.; Vantomme, A.; Mitard, J.; Caymax, M.; MEURIS, Marc; Heyns, M.; Hoffmann, T.Proceedings PaperC1
82010Selective area growth of high quality InP on Si (001) substratesWang, G.; Leys, M. R.; Loo, R.; Richard, O.; Bender, H.; Waldron, N.; BRAMMERTZ, Guy; Dekoster, J.; Wang, W.; Seefeldt, M.; Caymax, M.; Heyns, M. M.Journal ContributionA1
92010Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) SubstratesWang, G.; Leys, M. R.; Nguyen, N. D.; Loo, R.; BRAMMERTZ, Guy; Richard, O.; Bender, H.; Dekoster, J.; MEURIS, Marc; Heyns, M. M.; Caymax, M.Journal ContributionA1
102010High Quality Ge Virtual Substrates on Si Wafers with Standard STI PatterningLoo, R.; Wang, G.; Souriau, L.; Lin, J. C.; Takeuchi, S.; BRAMMERTZ, Guy; Caymax, M.Journal ContributionA1
112010Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilaneVincent, B.; Loo, R.; Vandervorst, W.; BRAMMERTZ, Guy; Caymax, M.Journal ContributionA1