Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/12004
Title: In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates
Authors: Devloo-Casier, Kilian
Dendooven, Jolien
Ludwig, K.F.
LEKENS, Geert 
D'HAEN, Jan 
Detavernier, Christophe
Issue Date: 2011
Source: APPLIED PHYSICS LETTERS, 98(231905). p. 1-3
Abstract: The initial growth of HfO2 was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO2 was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H2O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness.
Document URI: http://hdl.handle.net/1942/12004
ISSN: 0003-6951
e-ISSN: 1077-3118
DOI: 10.1063/1.3598433
ISI #: 000291658900019
Category: A1
Type: Journal Contribution
Validations: ecoom 2013
Appears in Collections:Research publications

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