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http://hdl.handle.net/1942/12004
Title: | In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates | Authors: | Devloo-Casier, Kilian Dendooven, Jolien Ludwig, K.F. LEKENS, Geert D'HAEN, Jan Detavernier, Christophe |
Issue Date: | 2011 | Source: | APPLIED PHYSICS LETTERS, 98(231905). p. 1-3 | Abstract: | The initial growth of HfO2 was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO2 was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H2O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness. | Document URI: | http://hdl.handle.net/1942/12004 | ISSN: | 0003-6951 | e-ISSN: | 1077-3118 | DOI: | 10.1063/1.3598433 | ISI #: | 000291658900019 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2013 |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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Kilian Devloo-Casier APPLAB9823231905_1.pdf | Published version | 492.28 kB | Adobe PDF | View/Open |
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