Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/12252
Title: One-step growth of Si(3)N(4) stem-branch featured nanostructures: Morphology control by VS and VLS mode
Authors: WANG, Qiushi 
Gao, Wei
SHAN, Lianchen 
Zhang, Jian
Jin, Yunxia
Cong, Ridong
Cui, Qiliang
Issue Date: 2011
Publisher: ACADEMIC PRESS INC ELSEVIER SCIENCE
Source: JOURNAL OF SOLID STATE CHEMISTRY, 184 (9). p. 2553-2558
Abstract: We report here one-step synthesis of Si(3)N(4) nanodendrites by selectively applying a vapor-solid (VS) and vapor-liquid-solid (VLS) strategy via direct current arc discharge method. The resultant nanodendrites were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy and X-ray powder diffraction. The spine-shaped nanodendrites were generated by a noncatalytic growth following a VS mode. The uniform secondary nanowire branches were epitaxial grown from two side surfaces of the nanowire stems. The pine-shaped nanodendrites were obtained through a catalytic growth in a VLS process. These branch nanowires were unsystematically grown from the nanocone-like stems. The photoluminescence spectra of the nanodendrites show a strong white light emission around 400-750 nm, suggesting their potential applications in light and electron emission devices. (C) 2011 Elsevier inc. All rights reserved.
Notes: Cui, QL (reprint author),[Wang, QS; Gao, W; Zhang, J; Jin, YX; Cong, RD; Cui, QL] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China [Shan, LC] Hasselt Univ, Inst Mat Res IMO, BE-3590 Diepenbeek, Belgium cql@jlu.edu.cn
Keywords: Silicon nitride; Nanostructure; Arc discharge; Photoluminescence
Document URI: http://hdl.handle.net/1942/12252
ISSN: 0022-4596
e-ISSN: 1095-726X
DOI: 10.1016/j.jssc.2011.06.041
ISI #: 000294835700036
Category: A1
Type: Journal Contribution
Validations: ecoom 2012
Appears in Collections:Research publications

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